Etched silicon based devices and methods for their preparation
An etching and device technology, applied in the field of etching silicon-based devices and their preparation, can solve problems such as charge degradation
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Embodiment 1
[0081] Example 1 - Surface treatment to remove silicon oxide (Si-O bond) / pre-etch and post-etch:
[0082] The silicon substrates (wafers) of Si(100) and Si(111) were washed with isopropanol and placed in N 2 (g) Dry for 10 s at lower temperature for cleaning. Then, the samples were sonicated with isopropanol at 40 Hz for 30 s, and 2 (g) and dry for 10 s. The obtained silicon sample was immersed in a buffered HF solution (pH=6) for 30 s, and then transferred into 70 wt% NH 4 F in the solution up to 30s. The samples were then rinsed in DI water (18 MΩ cm) for 2 (g) and dry for 10s. In order to realize the complete oxidation of the Si surface, the Si sample was placed under 30% humidity in O 2 Thermal oxidation at 500°C for 5 minutes. Then, the obtained Si samples were immersed again in buffered HF solution (pH = 6) for 30 s, and then moved into 70 wt% NH 4 F solution, then at 10 -6 Vacuum was applied at torr for 10 minutes to remove (as much as possible) the remainin...
Embodiment 2
[0083] Example 2 - Surface Etching:
[0084] A) Silicon surface etching procedure
[0085] By immersing the Si wafer in 0.02M silver nitrate (AgNO 3 ) and 5M HF in an aqueous solution (Solution I) for 20 s to deposit Ag nanoparticles on the surface of the hydrogenated Si wafer obtained from Example 1. In the second step, at room temperature, the Si wafer was immersed in a Teflon container containing 5M HF and 30% H at a volume ratio of 10:1. 2 o 2 50 mL of solution (Solution II) for 20 minutes. The surfaces obtained after the etching procedure with solutions I and II were then rinsed several times in deionized water and dried at room temperature. Finally, the whole wafer was soaked in concentrated (65%) nitric acid (HNO 3 ) for 15 min to remove residual Ag nanoparticles from the Si NW surface. The post-etch process included hydrogenation of the Si surface as described in Example 1, oxidation at 500 degrees, and rehydrogenation.
[0086] B) Silicon Surface Preparation ...
Embodiment 3
[0092] Example 3 - Surface Chlorination:
[0093] The freshly etched Si surface was exposed to a chlorine gas mixture (0.4% Cl 2 and 99.6%N 2 ) and irradiated under soft blue light (470 nm) for 20 min to form a defect-free Cl-terminated Si surface. The obtained surface is then treated with N 2 Stream flush.
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