Manufacturing method of back-contact tactile sensor and back-contact tactile sensor
A tactile sensor, back-contact technology, applied in the field of sensors, can solve the problems of high packaging cost, large size of tactile sensor, difficulty in large-area expansion, etc., to achieve the effect of reducing packaging cost and increasing the sensing area on the back
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Embodiment 1
[0136] This embodiment mainly provides a method for making a back-contact tactile sensor. The scheme of this embodiment mainly includes making MEMS micromechanical sensing structures using SOI silicon wafers, such as Image 6 with Figure 7 as shown, Image 6 It is a schematic diagram of the process of the manufacturing method of the back contact tactile sensor in Example 1 of the present application; Figure 7 It is a schematic structural diagram of the back contact tactile sensor in Embodiment 1 of the present application. and refer to Figure 4 , the beam-membrane-island structure of the back-contact tactile sensor includes four beam structures 111, and the specific process implementation steps are:
[0137] 1) An SOI silicon wafer is provided, and a silicon dioxide layer is thermally oxidized and grown on the SOI silicon wafer. Specifically, the thickness of the silicon dioxide layer is The etch layer forms a specific area, and boron ions are implanted and diffused i...
Embodiment 2
[0156] Such as Figure 11 as shown, Figure 11 It is a schematic structural diagram of the back-contact tactile sensor in Embodiment 2 of the present application; this embodiment mainly provides another manufacturing method of the back-contact tactile sensor. In order to simplify the application, the same parts as in Embodiment 1 in this embodiment will not Let me repeat.
[0157] The main difference between the present application and the manufacturing method of the back contact tactile sensor in Example 1 is as follows:
[0158] The packaging substrate 2 is a conventional TSV adapter board made of double-throw low-resistance silicon wafers. The sensitive structure 11 includes two beam structures 111, and the two beam structures 111 are on a straight line, respectively located on both sides of the island structure 112. A dry etching process releases the transferred wafer-level sensors. The specific difference process steps include the following:
[0159] 1) The formed bea...
Embodiment 3
[0166] Such as Figure 14 as shown, Figure 14 It is a sectional view of the back contact tactile sensor in embodiment 3 of the present application; and refer to figure 2 . In order to simplify the present application, the parts of this embodiment that are the same as those of Embodiment 1 will not be repeated.
[0167] The difference between this application and the manufacturing method of the back contact tactile sensor in Embodiment 1 is as follows, the packaging substrate 2 is a TSV adapter plate with conductive through holes 22 made of a conventional silicon wafer, and the ultra-thin sensing chip is transferred to the packaging substrate 2 . The specific difference process steps include the following:
[0168] 1) Form beam-island structure and support structure 12 by etching on SOI (Silicon-On-Insulator) silicon wafer, fabricate force sensitive resistor 114, deposit first barrier layer 14, fabricate metal lead 17 and first conductive element 15 , to obtain the wafer...
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Abstract
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