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Active layer structure and manufacturing method thereof

A production method and active layer technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems affecting the uniformity of laser crystallization large plates and poor film uniformity, so as to overcome the problems of film layer The effect of poor uniformity, guarantee of product characteristics, and improvement of uniformity

Active Publication Date: 2020-09-29
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Application Information

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Problems solved by technology

[0008] The purpose of the present invention is to provide an active layer structure and a manufacturing method thereof, which are used to solve the defects of poor uniformity of the film layer in the active layer structure manufactured by chemical vapor deposition, which affects the laser crystallization of large plates. Uniform technical issues

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  • Active layer structure and manufacturing method thereof
  • Active layer structure and manufacturing method thereof
  • Active layer structure and manufacturing method thereof

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Embodiment Construction

[0034] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0035] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the a...

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Abstract

The invention provides an active layer structure and a manufacturing method thereof. The thickness uniformity of the active layer structure is less than 2.5%, and the active layer structure comprisesa first amorphous silicon semiconductor layer and a second amorphous silicon semiconductor layer. According to the invention, a chemical vapor deposition method is adopted to respectively use monosilane and hydrogen or use monosilane and argon as working gases to manufacture two amorphous silicon semiconductor layers; and the center of a first amorphous silicon semiconductor layer made of monosilane and hydrogen is concave. The center of the second amorphous silicon semiconductor layer made of the monosilane and the argon is in a convex shape, the concave shape and the convex shape are combined to form a uniform active layer structure, and the uniformity of the film layer is less than 2.5%, so that the uniformity of the active layer structure is improved, and the product characteristics are guaranteed.

Description

technical field [0001] The invention relates to the display field, in particular to an active layer structure and a manufacturing method thereof. Background technique [0002] With the advancement of technology and the development of the times, people have higher and higher requirements for mobile phone display screens. The current mainstream hard screen display can no longer meet the needs of the market. [0003] The amorphous silicon semiconductor layer in the low temperature polysilicon layer (Low Temperature Poly Silicon, LTPS) is an electron channel layer, and the uniformity of this layer directly affects the characteristics of the array substrate. [0004] At present, the preparation of amorphous silicon semiconductor layer is generally made by chemical vapor deposition method, including two production methods, respectively using monosilane and hydrogen or using monosilane and argon as working gases, and the amorphous silicon semiconductor layer produced by it shows ...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L21/02
CPCH01L29/0603H01L21/02532H01L21/02592H01L21/0262H01L21/02656Y02P70/50
Inventor 江艺
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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