A double-sided electroplated thick copper film with fenestration

Abstract

The invention discloses a double-sided electroplating thick copper film with a window hole, which belongs to the technical field of wafer processing, and includes a wafer, a thick copper film, copper grains and a cutting frame, and the thick copper film is bonded on an adhesive layer. On the dicing frame; there is a dicing groove between the two wafers, and the dicing groove is connected with a silicon oxide or silicon nitride protective layer; between the wafer and the thick copper film, there is an adhesion layer, a barrier layer and a copper Seed layer; an ILD layer is connected between the wafer and the copper particles, and a tungsten through hole is provided on the ILD layer, and an adhesion layer, a barrier layer and a copper seed layer are connected on the ILD layer, and the adhesion layer, the barrier layer The copper seed layer is located directly above the tungsten via; the wafer is bonded to the glass carrier to form an ultra-thin wafer, and the glass carrier window is formed at the front contact point of the wafer to solve the gap between the thick film copper and the packaging material Leakage problem.

Description

technical field [0001] The invention relates to the technical field, and more specifically relates to a double-sided electroplated thick copper film with a window hole. Background technique [0002] In the design and structure of high-power, high-voltage / current semiconductor components, it is very important to use thick-film copper heat sink (Cuheat Sink), otherwise the components will cause serious reliability problems due to local damage caused by overheating, and super Thin wafers are extremely important for low-resistance and high-frequency operation. How to combine ultra-thin wafers with double-sided electroplated thick-film copper heat dissipation wires and the structure and installation method of the protection of the side walls of the cutting surface are the core of the present invention. . Existing technology. Shortcomings of the prior art: 1. If the thick-film copper plating on the back of the ultra-thin wafer is done, due to the stress and the difference between...

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Problems solved by technology

Existing technology. Shortcomings of the prior art: 1. If the thick-film copper plating on the back of the ultra-thin wafer is done, due to the stress and the difference between the coefficient of thermal expansion Cu and Si are large, there will be problems of layering and warping Crack; 2. Electroplating thick Cu film on the front and back at the same time cannot be implemented without the technology of opening windows on the glass substrate. If the front side is implemented first, the wafer stress problem will make it impossible to electroplate the thick Cu film on the back; It is very difficult to use traditional cutting and plasma cutting processes on the circle; 4. It is also very difficult to debond the double-sided thick film Cu on the glass carrier after cutting, and it is also very difficult when cutting ultra-thin wafers or transferring them to Dicing Frame The possibility of fragmentation is very high; 5. The current cutting technology cannot implement sidewall protection for the separated crystal grains, and it is difficult to avoid the reliability problem of current leakage (leakage Problem) in high-power operation of packaging materials and thick-film wires

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