Scan robot for semiconductor wafer ion implantation

Abstract

The present invention relates to a scan robot for semiconductor wafer ion implantation, which includes: an L1 shaft, which is vertically coupled to one side of a first link, and drives the first linkto rotate by the driving of a first drive unit; an L2 shaft which is vertically coupled to the other side of the first link and one side of a second link laminated on the first link, and drives the second link to rotate by the driving of a second drive unit, with the second link being same in length as the first link and laminated on the first link; an R shaft which is vertically coupled to the other side of the second link and the center of a support frame and drives the support frame to rotate by the driving of a third drive unit, with the support frame supporting a scanning head being laminated on the other side of the second link; and a Y shaft which is horizontally coupled to the support frame, supports both sides of the scanning head, and drives the scanning head to rotate by the driving of a fourth driving unit.

Description

technical field [0001] The invention relates to a semiconductor wafer ion implantation scanning robot, more specifically, the semiconductor wafer ion implantation scanning robot can scan the wafer in any specified direction in the horizontal direction during the ion implantation process of the semiconductor wafer to allow the implanted wafer to The ions are evenly distributed. Background technique [0002] In the semiconductor element manufacturing process, the oxidation process, photo-etching process, diffusion process, ion implantation process, and metal process are usually repeated on the silicon wafer. [0003] The ion implantation process in the process refers to implanting impurities charged with preset energy into the wafer according to the required amount and required depth. In the semiconductor process, the ion implantation process generally refers to implanting dopant ions on the surface of the silicon wafer. [0004] The ion implanter (Ion Implanter) used in the...

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Problems solved by technology

[0010] However, if image 3 As shown, if the existing tilt angle adjustment method uses a high tilt angle (High Tilt Angle) to implant a low-energy ion beam with serious beam blow-up (Beam Blow-up), the distance between the ion beam reaching the upper part of the wafer and the lower part of the wafer is different. As a result, the ion beam density in the vertical direction of the wafer is different, which leads to the deterioration of the uniformity of ion beam implantation.

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