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Control method and controller for program pause and recovery of memory

A control method, the technology of the controller, applied in the direction of static memory, read-only memory, digital memory information, etc.

Active Publication Date: 2020-10-09
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in cases where the number of cells per page increases, it may be necessary to suspend program operation as soon as a read command is received

Method used

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  • Control method and controller for program pause and recovery of memory
  • Control method and controller for program pause and recovery of memory
  • Control method and controller for program pause and recovery of memory

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Embodiment Construction

[0016] Certain terms are used throughout the specification and appended claims to refer to particular components. Manufacturers may refer to components by different names, as those skilled in the art will recognize. This document does not intend to distinguish between components with different names but with the same function. In the following description and claims, the terms "comprises" and "comprises" are used in an open manner and should therefore be construed to mean "including but not limited to". Additionally, the term "coupled" is intended to mean an indirect or direct electrical connection. Thus, if a device is electrically connected to another device, that connection may be through a direct electrical connection or through an indirect electrical connection via other devices and connections. "Approximately" means that within an acceptable error budget, those skilled in the art can solve technical problems within a certain error budget and basically achieve technical...

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Abstract

A control method for a memory array, the control method comprising: programming bit cells of the memory array in a programming phase; and discharging the bit cells of the memory array in a dischargingstage, wherein the programming stage comprises the following steps of: programming bit cells of the memory array by using a plurality of programming voltage pulses; wherein the discharging stage comprises the following steps: isolating a selection line of a bit cell of the memory array; and generating programming voltage pulses for bit cells of the memory array; wherein the programming phase maybe suspended to the pause phase by a pause command after the discharge phase; wherein the pause command is received during one programming voltage pulse of the plurality of programming voltage pulses.

Description

technical field [0001] In general, the present invention relates to a control method and controller, and more particularly, the present invention relates to a control method and controller for program suspending and resuming of a memory. Background technique [0002] Semiconductor memory is widely used in various electronic devices such as cellular phones, digital cameras, personal digital assistants, medical electronics, mobile computing devices, and non-mobile computing devices. Non-volatile memory allows information to be stored and retained. Examples of nonvolatile memory include flash memory (for example, NAND type and NOR type flash memory), electrically erasable programmable read only memory (electrically erasable programmable read only memory, EEPROM), and the like. [0003] In non-volatile memory, each storage element is configured to store a charge, voltage, or other electrical parameter to represent data in a plurality of bit cells (or storage elements) formed fr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/30G11C16/34
CPCG11C16/10G11C16/30G11C16/34G11C16/3459G11C16/08G11C2216/20G11C16/32G11C7/12G11C7/227G11C2207/002
Inventor 杜智超王瑜李海波姜柯田野
Owner YANGTZE MEMORY TECH CO LTD