Semiconductor power module and power conversion device
A technology for power modules and semiconductors, which is applied to output power conversion devices, semiconductor devices, and conversion of AC power input to DC power output, etc. Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment approach 1
[0046] The semiconductor power module according to Embodiment 1 will be described. Such as figure 1 as well as figure 2 As shown, the semiconductor power module 1 mainly includes a base plate 3, an insulating substrate 7, a power semiconductor element 17, an external terminal 23, a main terminal 31, a connected body 33, a case 21, a resin agent 25 with high insulation and withstand voltage, and a sealing resin 27 and cover 29.
[0047] The insulating substrate 7 includes an insulating layer 9 and metal plates 11 and 13 . The metal plates 11 and 13 are formed on the insulating layer 9 as conductive patterns. As the insulating substrate 7 , ceramics such as alumina, aluminum nitride, or silicon nitride, epoxy resin, or the like are used, for example. A metal plate 11 is arranged on one surface of the insulating layer 9 , and a metal plate 13 is arranged on the other surface of the insulating layer 9 . As the metal plates 11 and 13, for example, copper or aluminum is used.
...
Embodiment approach 2
[0076] A semiconductor power module according to Embodiment 2 will be described. Such as Figure 18 As shown, in the connected body 33 in the semiconductor power module 1 , a tapered portion 40 as a first tapered portion is provided on the upper end side of the housing portion 34 . The tapered portion 40 is formed to expand outward (upward). In addition, structures other than its figure 1 as well as figure 2 The illustrated semiconductor power modules 1 are the same, so the same components are assigned the same reference numerals, and description thereof will not be repeated unless necessary.
[0077] In the semiconductor power module 1 described above, in addition to the effects described with respect to the semiconductor power module 1 according to Embodiment 1, the following effects can be obtained. That is, in the semiconductor power module 1 described above, the tapered portion 40 expanding upward is provided on the upper end side of the receiving portion 34 in the c...
Embodiment approach 3
[0080] In Embodiments 1 and 2, a semiconductor power module in which a housing portion is formed in an object to be connected has been described as an example. Here, a semiconductor power module in which housing portions are formed on main terminals will be described.
[0081] Such as Figure 19 As shown, the main terminal 31 in the semiconductor power module 1 is provided with a housing portion 34 for housing the connected body 33 . The connected body 33 is inserted through the lower end side of the housing portion 34 and accommodated in the housing portion 34 . A slit portion 37 is provided in the housing portion 34 . In addition, structures other than its figure 1 as well as figure 2 The illustrated semiconductor power modules 1 are the same, so the same components are assigned the same reference numerals, and description thereof will not be repeated unless necessary.
[0082] In the semiconductor power module 1 described above, in addition to the effects described wi...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More