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Ion beam energy control device

An energy control, ion beam technology, applied in discharge tubes, electrical components, circuits, etc., can solve the problems of limited beam current and insufficient beam height, achieve less beam path restrictions, small motor surface area, and reduce beam shock The effect of probability in

Active Publication Date: 2020-10-30
KINGSTONE SEMICONDUCTOR LIMITED COMPANY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The technical problem to be solved by the present invention is to provide an ion beam energy control device in order to overcome the defects of limited beam current and insufficient beam height of existing devices

Method used

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  • Ion beam energy control device
  • Ion beam energy control device
  • Ion beam energy control device

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Experimental program
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Embodiment

[0054] This embodiment provides an ion beam energy control device. figure 1 The process of the ion beam passing through the ion beam energy control device 100 is simply shown, and the energy of the outgoing ion beam and the incident ion beam may be the same or different. Figure 2-3 The internal structure of the ion beam energy control device 100 is shown. The ion beam energy control device includes an inlet port 101 and an outlet port 102 . The entrance port 101 is for the ion beam 200 to enter, and the exit port 102 is for the ion beam 200 to exit.

[0055] The ion beam energy control device also includes several electrode pairs 103 . The plurality of electrode pairs 103 are arranged between the inlet port 101 and the outlet port 102 . Each electrode pair 103 respectively includes a first electrode 1031 and a second electrode 1032 oppositely disposed. Both the first electrode 1031 and the second electrode 1032 are rod-shaped. The space between the first electrode 1031 a...

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Abstract

The invention discloses an ion beam energy control device, which comprises an inlet end, an outlet end and a plurality of electrode pairs, wherein the inlet end is provided for injection of an ion beam, and the outlet end is provided with ejection of the ion beam; each electrode pair comprises a first electrode and a second electrode which are oppositely arranged, the first electrode and the second electrode are rod-shaped, and a space between the first electrode and the second electrode allows the ion beam to pass through; at least one electrode pair in the plurality of electrode pairs formsa first electrode group, and the voltage applied to the first electrode group enables the ion beam to deflect towards a first direction; at least one electrode pair in the plurality of electrode pairsforms a second electrode group, the voltage applied to the second electrode group enables the ion beam to deflect towards a second direction, and the second direction is opposite to the first direction. The ion beam energy control device has many advantages in the aspects of electrode shape, electrode layout, beam adjustment and the like.

Description

technical field [0001] The invention belongs to the field of semiconductor equipment, in particular to an ion beam energy control device. Background technique [0002] In the "low-energy and high-beam" ion implanter, it is necessary to achieve an ion beam with extremely low final energy and high beam intensity. Since the extraction intensity and transmission efficiency of the ion beam will decrease significantly as the energy decreases, it is necessary to use higher energy to extract and transmit the ion beam, and then decelerate the ion beam through one or several deceleration devices, so as to achieve low energy and large beam current . During deceleration, loss of ion beam intensity needs to be avoided. In addition, ions with intermediate energies are inevitably generated during the deceleration process. These ions with different final energies will have adverse effects on the fabricated semiconductor devices, known as energy pollution, which also need to be minimized. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/304H01J37/317
CPCH01J37/3171H01J37/304
Inventor 张劲陈炯夏世伟
Owner KINGSTONE SEMICONDUCTOR LIMITED COMPANY