InGaN patterned substrate template, preparation method thereof and application of InGaN patterned substrate template in red light Micro-LED chip
A patterned substrate and template technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficulty in realizing InGaN-based red LED chips, inability to meet the requirements of In component content, etc., to improve light extraction efficiency, Enhance heat dissipation and air convection performance, reduce the effect of lattice mismatch
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Embodiment 1
[0051] A method for preparing an InGaN pattern substrate is provided, and the specific steps are as follows:
[0052] Step 1, preparing a sapphire substrate with a thickness of 300 microns;
[0053] Step 2, growing a 1000nm thick GaN layer on the sapphire substrate;
[0054] Step 3: Deposit and grow SiO with a thickness of 100nm on the GaN layer 2 template layer;
[0055] Step 4, preparing a frustoconical hole array that runs through the template layer on the template layer, see figure 2 and image 3 , the diameter of the upper bottom surface of the frustum-conical structure is 500nm, the diameter of the lower bottom surface is 250nm, the distance between adjacent holes is 10000nm, and the array angle of the hole array of the frustum-conical structure is 30°;
[0056] Step 5: Grow GaN crystals in the hole array of frustum structure obtained in step 4. GaN crystals fill the holes and continue to grow and form a GaN hexagonal pyramid structure on the surface of the template...
Embodiment 2
[0064] A method for preparing an InGaN pattern substrate is provided, and the specific steps are as follows:
[0065] Step 1, preparing a sapphire substrate 1 with a thickness of 300 microns;
[0066] Step 2, growing a 1000nm thick GaN layer on the sapphire substrate;
[0067] Step 3, deposit 100nm thick Si on the GaN layer 2 3 N 4 template layer;
[0068] Step 4, prepare a hexagonal frustum structure hole array that runs through the template layer on the template layer, see figure 2 and Figure 4 , wherein the length of the upper base of the hexagonal truss structure is 250nm, the length of the lower base is 125nm, the six sides of the hexagonal truss structure are parallel to the {10-11} crystal plane, and the distance between adjacent hexagonal trusses is 10000nm, the six prisms The array angle of the prism structure hole array is 30°;
[0069] Step 5. GaN crystals are grown in the hexagonal pyramid structure hole array obtained in step 4. GaN crystals fill the holes...
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