Preparation method and application of anti-perovskite type Mn3AlC with vacancies
An anti-perovskite and vacancy technology, applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., can solve the problems of inability to be used as an effective positive electrode material for zinc ion batteries, tight arrangement and packing, etc., to achieve long-term stability, Good cycle performance and high repeatability
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Embodiment 1
[0029] The vacancy antiperovskite type Mn of this embodiment 3 The preparation method of AlC comprises the steps:
[0030] (1) Anti-perovskite Mn 3 AlC is placed in a plasma chemical vapor deposition furnace, and treated with argon plasma for 360 minutes at a temperature of 100 ° C at a heating rate of 5 per minute;
[0031] (2) After being treated with argon plasma, the temperature is lowered at a rate of 2°C per minute to obtain vacancy anti-perovskite Mn 3 AlC.
[0032] For the resulting vacancy antiperovskite Mn 3 The crystal structure and morphology of AlC were characterized, and the results can be found in figure 1 and figure 2 . From figure 1 It can be seen that the vacancy antiperovskite Mn 3 AlC has an antiperovskite structure, indicating that during argon plasma treatment, Mn 3 The crystal structure of AlC itself does not change. From figure 2 It can be seen that after argon plasma treatment, Mn 3 AlC produces a large number of manganese vacancies.
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Embodiment 2
[0035] The vacancy antiperovskite type Mn of this embodiment 3 The preparation method of AlC comprises the steps:
[0036] (1) Anti-perovskite Mn 3 AlC is placed in a plasma chemical vapor deposition furnace, and treated with argon plasma for 1 minute at a temperature of 1200 °C at a heating rate of 10 °C per minute;
[0037] (2) After being treated with argon plasma, the temperature is lowered at a rate of 2°C per minute to obtain vacancy anti-perovskite Mn 3 AlC;
[0038] Vacant antiperovskite Mn 3 AlC is made into a working electrode according to the method provided by the present invention and the corresponding electrical performance test is carried out. The results are shown in Table 1. When charging and discharging at 1C, the first discharge specific capacity is 279 mAhg -1 ; Specific capacity after 3000 reverse cycles is 198 mAhg -1 .
Embodiment 3
[0040] The vacancy antiperovskite type Mn of this embodiment 3 The preparation method of AlC comprises the steps:
[0041] (1) Anti-perovskite Mn 3 AlC is placed in a plasma chemical vapor deposition furnace, and treated with argon plasma for 300 minutes at a temperature of 200°C at a heating rate of 8°C per minute;
[0042](2) After being treated with argon plasma, the temperature is lowered at a rate of 2°C per minute to obtain vacancy anti-perovskite Mn 3 AlC;
[0043] Vacant antiperovskite Mn 3 AlC is made into a working electrode according to the method provided by the present invention and the corresponding electrical performance test is carried out. The results are shown in Table 1. When charging and discharging at 1C, the first discharge specific capacity is 264 mAhg -1 ; Specific capacity after 3000 reverse cycles is 193 mAhg -1 .
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