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A copper oxide film/silicon wafer composite structure and preparation method thereof

A composite structure, silicon wafer technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve problems such as inability to bond silicon substrates, easy curling and cracking of copper oxide films, affecting the application of copper oxide materials, etc.

Active Publication Date: 2022-07-29
INST OF APPLIED PHYSICS JIANGXI ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the copper oxide film obtained by directly heating the copper film to prepare the copper oxide film is very easy to curl and crack, and cannot be tightly and firmly bonded to the silicon substrate, which seriously affects the application of copper oxide materials.

Method used

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  • A copper oxide film/silicon wafer composite structure and preparation method thereof
  • A copper oxide film/silicon wafer composite structure and preparation method thereof
  • A copper oxide film/silicon wafer composite structure and preparation method thereof

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preparation example Construction

[0028] The invention provides a preparation method of a copper oxide film / silicon wafer composite structure, comprising the following steps:

[0029] Using a copper target as a copper source, magnetron sputtering copper on a silicon wafer to obtain a copper film / silicon wafer structure;

[0030] The copper film / silicon wafer structure is subjected to an oxidation reaction under an ozone atmosphere to obtain a precursor structure;

[0031] The precursor structure is heat-treated in an air atmosphere to obtain the copper oxide film / silicon wafer composite structure.

[0032] The invention uses a copper target as a copper source, and magnetron sputters copper on a silicon wafer to obtain a copper film / silicon wafer structure.

[0033] In the present invention, the purity of the copper target is preferably 99.999%. In the present invention, the silicon wafer is preferably a silicon oxide wafer, and the silicon oxide wafer preferably includes a silicon wafer and a silicon dioxide...

Embodiment 1

[0046] Silicon wafers (4 cm in area) covered with silicon dioxide with an average thickness of 300 nm 2 ) as the sputtering substrate, using a copper target with a purity of 99.999% as the sputtering target, sputtering a layer of copper film with a thickness of 1.5 μm on the silicon wafer by magnetron sputtering to obtain a copper film / silicon wafer composite Structure; the parameters of magnetron sputtering include: the atmosphere of magnetron sputtering is high-purity argon, the purity is 99.999%, the gas pressure is 0.6Pa, and the power density is 20W / cm 2 , the time is 0.5h;

[0047] The copper film / silicon wafer composite structure is placed in a flowing ozone atmosphere, the flow rate of the ozone atmosphere is 3 g / h, and the oxidation reaction is carried out at room temperature for 10 min to obtain a precursor;

[0048] The precursor was placed in an air atmosphere with a flow rate of 80 L / min, and heat-treated at 350° C. for 0.5 h to obtain a copper oxide film / silicon...

Embodiment 2

[0054] The surface was covered with silica with an average thickness of 300 nm (area 3 cm 2 ) as the sputtering substrate, and a copper target with a purity of 99.999% as the sputtering target, sputtering a 3 μm thick copper film on the silicon wafer by magnetron sputtering to obtain a copper film / silicon Wafer composite structure; the atmosphere of magnetron sputtering is high-purity argon, the purity of high-purity argon is 99.999%, the gas pressure is 1Pa, and the power density is 20W / cm 2 , the time is 1h;

[0055] The copper film / silicon wafer composite structure is placed in a flowing ozone atmosphere, and the flow rate of the ozone atmosphere is 5 g / h, and the oxidation reaction is carried out at room temperature for 20 minutes to obtain a precursor;

[0056] The precursor was placed in an air atmosphere with a flow rate of 120 L / min, and heat-treated at 450° C. for 1 h to obtain a copper oxide film / silicon wafer composite structure.

[0057] Figure 5 It is the macr...

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Abstract

The invention provides a copper oxide film / silicon wafer composite structure and a preparation method thereof, and relates to the technical field of nano film material preparation. In the present invention, copper is deposited on the silicon wafer by the method of magnetron sputtering, so that the copper film is uniformly deposited on the silicon wafer; the copper film / silicon wafer structure is oxidized under the condition of ozone, and the copper in the copper film can It is oxidized to become copper oxide; after subsequent heat treatment, the bonding strength between the copper oxide film and the silicon wafer substrate becomes stronger. The copper oxide film of the copper oxide film / silicon wafer composite structure provided by the present invention is formed by stacking nano-sized copper oxide, the nano-sized copper oxide structure is a nano-sheet structure or a granular structure, and the thickness of the nano-sheet structure is is 100-200 nm, and the size of the nanoparticle structure is 200-300 nm. In the present invention, the bonding force between the copper oxide film and the silicon wafer is greater than 100 μN, and the bonding is stable and does not fall off or separate.

Description

technical field [0001] The invention relates to the technical field of nano film material preparation, in particular to a copper oxide film / silicon wafer composite structure and a preparation method thereof. Background technique [0002] Copper oxide is a p-type semiconductor material, which is often used as catalyst, electrode material, photothermal, photoconductive and sensor material, so copper oxide has very important engineering significance and economic value. [0003] Due to the large specific surface area and physicochemical properties of nanomaterials that are different from those of bulk materials, the preparation of nanomaterials is one of the hot research directions in the current scientific research community. Silicon wafers are the basic materials of current semiconductor industry products, and attaching copper oxide to silicon wafers is more conducive to utilizing the physical and chemical properties of copper oxide. However, the copper oxide film obtained by...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/16C23C14/35C23C14/58
CPCC23C14/165C23C14/5853C23C14/35
Inventor 韦江王佳伟胡强程香平陆磊张友亮焦斌斌刘觐
Owner INST OF APPLIED PHYSICS JIANGXI ACADEMY OF SCI
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