Unlock instant, AI-driven research and patent intelligence for your innovation.

A Design Method for Correcting Second-Order Aberration Based on Wien Analyzer

A design method and analyzer technology, applied in semiconductor/solid-state device testing/measurement, discharge tubes, electrical components, etc., can solve the problems of second-order aberration of deflection system and no correction without in-depth consideration, and achieve increased Large space utilization, reducing the effect of second-order aberration

Active Publication Date: 2021-11-19
XI AN JIAOTONG UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the current electron beam imaging system and detection equipment, it is often used to add an additional function of eliminating astigmatism to the Wien analyzer, just to achieve good focusing properties of the entire system, and does not consider the deflection system in depth. Brings second-order aberrations and doesn't correct for it

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Design Method for Correcting Second-Order Aberration Based on Wien Analyzer
  • A Design Method for Correcting Second-Order Aberration Based on Wien Analyzer
  • A Design Method for Correcting Second-Order Aberration Based on Wien Analyzer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The present invention will be further described in detail below.

[0023] A design method for correcting second-order aberrations based on the Wien analyzer. When the electron beam imaging or detection system has a deflection system, the field function is expanded and analyzed along the optical axis in series. The electron optical characteristics of the system can analyze the second-order aberration caused by the deflection system; using the Wien analyzer, a quadrupole field is introduced to compensate the second-order aberration caused by the deflection system in the electron beam imaging or detection system, specifically, By applying a voltage signal excitation to the arc electrode, the Wien analyzer can generate the required quadrupole field, superimposed on the Wien analyzer, and control and adjust the azimuth and excitation intensity of the quadrupole field, so as to achieve compensation for electron beam imaging Or the second-order aberration of the detection syst...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a design method for correcting second-order aberrations based on a Wien analyzer. When there is a deflection system, the field function is expanded to analyze the electronic optical characteristics of the system along the vicinity of the optical axis at this time, which can analyze Second-order aberrations due to deflection. Using the Wien analyzer, by applying voltage signal excitation to the arc electrodes, the analyzer can generate the required quadrupole field, which is superimposed on the Wien analyzer. Calculate the optical characteristics of the entire imaging system or detection system, and control and adjust the azimuth and excitation intensity of the quadrupole field based on the calculation results of the superimposed quadrupole field, so as to compensate the second-order aberration caused by the deflection of the system.

Description

technical field [0001] The invention relates to the technical field of semiconductor detection and the field of electron beam imaging, in particular to a design method for correcting second-order aberrations based on a Wien analyzer. Background technique [0002] With the development of semiconductor technology and the advancement of process technology, the size of devices continues to shrink, and those defects and particles that were not important at previous nodes may have a fatal impact on device performance. At the same time, due to the introduction of new materials, the development of new processes and the use of a new generation of photolithography technology, many new defects have been brought about. In order to meet the needs of physical research and the production of semiconductor devices and integrated circuits, electron beam imaging systems and detection equipment are required to have higher resolution and larger scanning fields. [0003] What was pursued before ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/147H01J37/153H01J37/28H01L21/66
CPCH01J37/1474H01J37/153H01J37/28H01L22/12
Inventor 康永锋常飞浩胡航锋赵静宜
Owner XI AN JIAOTONG UNIV