Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solar cell and preparation method of phosphorus and hydrogen doped monocrystalline silicon

A solar cell and hydrogen doping technology, applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as dislocation defects, midpoint defects, metal defects, etc., and achieve simple preparation methods and improved conversion. Efficiency, the effect of improving the lifespan of minority carriers

Pending Publication Date: 2020-12-11
新疆仕邦光能科技有限公司 +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing monocrystalline silicon production process, Czochralski monocrystalline silicon is prone to midpoint defects, dislocation defects and metal defects, etc. The existence of these defects will easily reduce the minority carrier life of monocrystalline silicon and reduce the conversion efficiency of solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell and preparation method of phosphorus and hydrogen doped monocrystalline silicon
  • Solar cell and preparation method of phosphorus and hydrogen doped monocrystalline silicon
  • Solar cell and preparation method of phosphorus and hydrogen doped monocrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0063] image 3 A flow chart of a method for preparing phosphorus and hydrogen-doped single crystal silicon provided in the embodiment of the present application, as shown in image 3 Shown, described preparation method comprises the following steps:

[0064] Put the polysilicon raw material and phosphorus dopant into the quartz crucible;

[0065] Put the quartz crucible in a single crystal furnace to evacuate, and melt the polysilicon raw material under the protection of an inert gas to obtain a silicon melt;

[0066] When the temperature of the silicon melt is stable, add a hydrogen source into the single crystal furnace, immerse the seed crystal into the silicon melt to start seeding;

[0067] After the seeding is finished, the shoulders are started, so that the diameter of the crystal gradually increases to the preset width, and then the equal-diameter growth is carried out;

[0068] After the isodiametric growth is completed, enter the final stage, so that the diameter...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention provides a solar cell and a preparation method of phosphorus and hydrogen doped monocrystalline silicon. The solar cell comprises a semiconductor substrate, a doped layer located on thefront surface of the semiconductor substrate, a front surface passivation layer and / or an anti-reflection layer located on the upper surface of the doped layer, a front surface electrode located on the upper surface of the front surface passivation layer and / or the anti-reflection layer, a tunneling oxide layer located on the back surface of the semiconductor substrate, a doped polycrystalline silicon layer located on the back surface of the tunneling oxide layer, a back surface passivation layer located on the back surface of the doped polycrystalline silicon layer and a back surface electrode located on the back surface of the back surface passivation layer. The semiconductor substrate comprises phosphorus and hydrogen doped monocrystalline silicon, the hydrogen doping concentration of the phosphorus and hydrogen doped monocrystalline silicon is 1 * 10<5> to 5* 10<16> atoms / cm<3>, the phosphorus doping concentration is 1 * 10 <15> to 5 * 10 <17> atoms / cm <3>, and the resistivity of the phosphorus and hydrogen doped monocrystalline silicon is 0.1-10 ohm.cm. According to the solar cell, the minority carrier lifetime in monocrystalline silicon can be effectively prolonged, the passivation effect of the cell is improved, and the conversion efficiency of the solar cell is improved.

Description

technical field [0001] The present application relates to the technical field of photovoltaic cells, in particular, to a solar cell and a method for preparing single crystal silicon doped with phosphorus and hydrogen. Background technique [0002] At present, as one of the fastest-growing fields in solar photovoltaic utilization, the technical development of crystalline silicon cells has attracted much attention, and improving the conversion efficiency of solar cells is an urgent problem to be solved. In the existing monocrystalline silicon production process, Czochralski monocrystalline silicon is prone to midpoint defects, dislocation defects, and metal defects. The existence of these defects will easily reduce the minority carrier life of monocrystalline silicon and reduce the conversion efficiency of solar cells. Contents of the invention [0003] In view of this, the embodiment of the present application provides a method for preparing solar cells and phosphorus- and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042H01L31/0216H01L31/0352H01L31/18C30B29/06C30B15/04
CPCH01L31/042H01L31/02167H01L31/035272H01L31/1804C30B29/06C30B15/04Y02E10/547Y02P70/50
Inventor 肖贵云白枭龙尚伟泽
Owner 新疆仕邦光能科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com