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Temporary adhesive containing polysiloxane that contains heat resistant polymerization inhibitor

A polyorganosiloxane, temporary bonding technology, applied in the direction of adhesive additives, non-polymer adhesive additives, adhesives, etc., can solve problems such as detachment or offset, achieve simple removal, excellent heat resistance, Excellent effect of spin coatability

Pending Publication Date: 2020-12-11
NISSAN CHEM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, detachment or offset due to grinding stress at the time of back grinding of semiconductor wafers is not preferable

Method used

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  • Temporary adhesive containing polysiloxane that contains heat resistant polymerization inhibitor
  • Temporary adhesive containing polysiloxane that contains heat resistant polymerization inhibitor
  • Temporary adhesive containing polysiloxane that contains heat resistant polymerization inhibitor

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0097] Preparation of the component (A) of the adhesive

[0098] As polysiloxane (a1), 10.00 g of a base polymer (manufactured by Wakka-Chemie Co., Ltd.) formed by Mw6900 vinyl group-containing MQ resin as polysiloxane (a1) and vinyl group-containing polysiloxane (a1) as polysiloxane (a1) were prepared. 3.90 g of linear polydimethylsiloxane (manufactured by Wacker Chemical Co., Ltd.), and linear polydimethylsiloxane (manufactured by Wacker Chemical Co., Ltd.) containing SiH groups with a viscosity of 70 mPa·s as polysiloxane (a2) ) 1.168 g, 0.77 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemical) having a viscosity of 40 mPa·s as polysiloxane (a2), and 0.77 g as alkynyl alcohol polymerization inhibitor (B) 0.042 g of 1,1-diphenyl-2-propyn-1-ol (manufactured by TCL) and 3.90 g of 5-nonanone (manufactured by TCL) as the solvent (C) were mixed with a stirrer (manufactured by Shinky, Awatori Rentaro) was stirred.

[0099] Separately, 0.1 g of a ...

Synthetic example 2

[0101] The same procedure as in Synthesis Example 1 was performed except that 2-phenyl-3-butyn-2-ol (manufactured by ALDRICH) was used instead of 1,1-diphenyl-2-propyn-1-ol. Modulation, as sample 2.

Synthetic example 3

[0103] Sample 3 was prepared in the same manner as in Synthesis Example 1 except that 1-ethynylcyclohexanol (manufactured by Wacker Chemical Co., Ltd.) was used instead of 1,1-diphenyl-2-propyn-1-ol.

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Abstract

To provide a temporary adhesive with which no voids occur between a support body and a wafer. This temporary adhesive, for releasably bonding a support body and a circuit surface of a wafer in order enable processing the back surface of the wafer, contains (A) a component which cures with a hydrosilylation reaction, (B) a polymerization inhibitor which has a 5% mass loss temperature in Tg-DTA of greater than or equal to 80 DEG C, and (C) a solvent. The component (A) contains: a polysiloxane (A1) that contains (a1) a polyorganosiloxane containing an alkyl group of 1-10 carbon atoms and an alkenyl group of 2-10 carbon atoms, and (a2) a polyorganosiloxane containing a hydrogen atom and an alkyl group of 1-10 carbon atoms; and (A2) a platinum-group metal-base catalyst. The polymerization inhibitor (B) is a compound represented in formula (1). In formula (1), R7 and R8 are both aryl groups of 6-40 carbon atoms, or are a combination of an alkyl group of 1-10 carbon atoms and an aryl group of6-40 carbon atoms.

Description

technical field [0001] The present invention relates to a temporary adhesive for fixing a wafer to a support during polishing of the back surface of the wafer, and a laminate using the temporary adhesive. Background technique [0002] Conventionally, a semiconductor wafer integrated in a two-dimensional plane direction requires a semiconductor integration technology in which the plane is further integrated (stacked) in a three-dimensional direction for the purpose of further integration. This three-dimensional lamination is a technique of multilayer integration while wiring through silicon vias (TSV: through silicon via). In multilayer integration, each wafer to be integrated is thinned by grinding the opposite side (that is, the back surface) of the formed circuit surface, and the thinned semiconductor wafers are stacked. [0003] A semiconductor wafer before thinning (here also simply referred to as a wafer) is bonded to a support by grinding it with a grinding machine. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304H01L21/02B32B7/06B32B27/00C09J5/04C09J11/06C09J183/05C09J183/07
CPCH01L21/6835H01L2221/68327H01L2221/6834C09J183/04C08G77/12C08G77/20C08L83/00C08K5/05C08K5/56C08K5/0025C09J5/04C09J11/06C09J11/04C08L83/04H01L21/02H01L21/304C09J2301/31C09J2203/37B32B7/06B32B2457/14C09J2483/00H01L21/6836
Inventor 泽田和宏森谷俊介新城彻也荻野浩司奥野贵久
Owner NISSAN CHEM CORP