Drying device, drying method, cleaning and drying system and cleaning and drying method

Abstract

The invention discloses a drying device, a drying method, a cleaning and drying system and a cleaning and drying method. The drying device is used for drying a wafer, wherein a deep hole is formed inthe wafer by etching. The drying device comprises a chamber, a rotating suction cup, a power source and a base. The chamber is arranged in an etching cavity for etching the wafer. The rotating suctioncup is inversely arranged in the chamber in a manner that an adsorption face is downward, and the rotating suction cup is arranged to be capable of rotating around a rotating shaft. The power sourceis connected to the rotating suction cup and supplies power to the rotating suction cup. The base is arranged on the adsorption face of the rotating suction cup in a manner of being capable of rotating together with the rotating suction cup and is used for fixing the wafer. According to the drying device, the inverted rotating suction cup is directly used in the etching cavity of the wafer, so that water in the deep hole of the wafer is separated under the dual action of gravity and centrifugal force, and the wafer drying efficiency and reliability are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, to a wafer drying device, a drying method, a cleaning and drying system, and a cleaning and drying method. Background technique [0002] During the semiconductor process, in order to meet the cleanliness requirements of the wafer surface, the wafer is usually cleaned and dried. Therefore, the wafer cleaning technology is one of the important factors affecting the yield rate, device quality and reliability of semiconductor devices. The purpose of wafer cleaning is to remove pollutants such as particles, organic matter, metals and oxides attached to the wafer surface, so as to avoid adverse effects of pollutants on subsequent processes. [0003] In the existing semiconductor process, there are mainly two types of wet cleaning processes for wafers: tank-type batch cleaning and chamber single-wafer spin cleaning. In tank-type batch cleaning, wafers are sub...

AI Technical Summary

Problems solved by technology

Since the characteristic size of the lower layer is often smaller than that of the upper layer, a bottleneck will be formed at the junction of the stacks. Therefore, it is difficult to clean the deep holes (deep grooves) with the traditional wet process, and there will be residues, which seriously affect the follow-up process. process, and will cause device failure

In addition, it is difficult to achieve the drying effect by natural drying in the deep hole (deep groove). Not only does it require a very long process cycle, but there may also be moisture residue, which will affect the subsequent process and the final device performance.

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