Fully-surrounded gate fin field effect transistor and manufacturing method thereof
A technology of fin field effect and fully surrounded gate, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc. Leakage and punch-through problems, effects of eliminating effects
Pending Publication Date: 2021-01-08
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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Problems solved by technology
The manufacturing process of all-around gate devices is more complicated because the all-around gate is suspended above the bottom substrate
Method used
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Embodiment Construction
[0044] Such as Figure 1A As shown, it is a three-dimensional view of the gate fin field effect transistor fully surrounded by the embodiment of the present invention; Figure 1B shown, is along the Figure 1A The cross-sectional view corresponding to the dotted line surface 101 in the figure; the embodiment of the present invention fully surrounds the gate fin field effect transistor including:
[0045] A fin body formed on a semiconductor substrate 1 , on which an active region 2 , a drain region 3 and a plurality of fully-enclosed channel structures 4 are formed.
[0046] In the embodiment of the present invention, the semiconductor substrate 1 includes a silicon substrate.
[0047] The fin body is formed by etching the semiconductor substrate 1 .
[0048] The width of the fin body at the position of the source region 2 and the drain region 3 is greater than the width of the fin body at the corresponding position of the fully surrounding channel structure 4 .
[0049] An ...
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The invention discloses a fully-surrounded gate fin type field effect transistor, which comprises: a fin body, wherein a source region, a drain region and a plurality of fully-surrounded channel structures are formed on the fin body, a first groove formed after the fin body is removed is formed between the source region and the drain region, the fully-surrounded channel structures are formed in the first groove, spacing regions are arranged among the fully-surrounded channel structures, the fully-surrounded channel structures and the spacing regions are alternately arranged in the longitudinaldirection, each fully-surrounded channel structure is composed of a first material epitaxial layer, and the spacing region is formed by performing self-aligned etching on a second material epitaxiallayer, before self-aligned etching, the first and second material epitaxial layers with different etching rates are longitudinally and alternately arranged in the first groove, and a gate structure fully covers the surface of each fully-surrounded channel structure. The invention further discloses a manufacturing method of the fully-surrounded gate fin type field effect transistor. According to the invention, a plurality of fully-surrounded channel structures can be formed on the fin body, so that the performance of the device can be improved.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a fin field effect transistor (FinFET) with multi-channel fully surrounding gates. The invention also relates to a method for manufacturing the fin field effect transistor with a fully surrounded gate. Background technique [0002] With the development of integrated circuits, the device size is getting smaller and smaller, and the integration level is getting higher and higher. With the continuous reduction of the feature size of semiconductor devices, the traditional planar semiconductor manufacturing technology can no longer be used, and non-planar semiconductor devices have emerged. For example, the application of new technologies such as silicon-on-insulator, double gate, and multi-gate. At present, fin field effect transistors are widely used in the field of small size, and semiconductor devices with a gate-all-around structure have special char...
Claims
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IPC IPC(8): H01L29/78H01L29/06H01L29/10H01L29/423H01L21/336
CPCH01L29/785H01L29/0607H01L29/1033H01L29/42356H01L29/66795
Inventor 黄秋铭
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD