LED chip with p-type insertion layer and manufacturing method thereof
An LED chip and manufacturing method technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low light extraction efficiency, low hole injection efficiency, serious overflow, etc., so as to improve luminous performance, reduce electron leakage, extend the The effect of the service life
Active Publication Date: 2022-02-01
XIAMEN CHANGELIGHT CO LTD
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Problems solved by technology
[0004] However, due to the limitations of materials, structures and production processes in the actual production process, there are still many problems in the large-scale application of LEDs, such as serious overflow caused by insufficient electron confinement, low hole injection efficiency and low light extraction efficiency. It has brought great challenges to the commercialization of LED products
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[0040] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0041] At present, in order to improve the luminous efficiency of LEDs, some technologies set an insertion layer between the multi-quantum well structure and the P-type electron blocking layer. The insertion layer is more of a structure similar to a hole injection layer, including high Mg doping AlInGaN insertion layer, GaN insertion layer, and AlN insertion layer, etc.
[0042] However, the high Mg-doped AlInGaN insertion layer and the GaN insertion layer mainl...
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Abstract
The invention provides an LED chip with a P-type insertion layer and a manufacturing method thereof. By growing a discontinuously doped P-type insertion layer between a multi-quantum well structure and a P-type electron blocking layer, by adjusting the polarization electric field, Enhance the ability of hole migration to achieve the purpose of increasing hole injection; at the same time, the P-type insertion layer can increase the effective barrier height of electrons and reduce electron leakage, so that carriers can effectively recombine in quantum wells and improve the overall luminous performance of LEDs , In addition, the intermittent doping design of the P-type insertion layer can increase the current expansion and anti-static breakdown capabilities of the LED chip, thereby prolonging the service life of the LED chip.
Description
technical field [0001] The invention relates to the technical field of LEDs, and more specifically relates to an LED chip with a P-type insertion layer and a manufacturing method. Background technique [0002] In recent years, due to the excellent physical and chemical properties of III-V materials, such as large band gap, high breakdown electric field, and high electron saturation mobility, etc., they have received extensive attention and applications in the fields of electricity and optics. [0003] For example, blue-green light-emitting diodes currently used for display, Mini / Mirco LEDs with smaller sizes, and ultraviolet LEDs for sterilization and disinfection. [0004] However, due to the limitations of materials, structures and production processes in the actual production process, there are still many problems in the large-scale application of LEDs, such as serious overflow caused by insufficient electron confinement, low hole injection efficiency and low light extrac...
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IPC IPC(8): H01L33/06H01L33/14H01L33/32H01L33/00
CPCH01L33/06H01L33/14H01L33/145H01L33/32H01L33/0075
Inventor 万志卓祥景尧刚程伟林志伟
Owner XIAMEN CHANGELIGHT CO LTD