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A kind of preparation method of photodetector

A photodetector, optical waveguide technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low responsivity and difficult adjustment of the mode effective refractive index.

Active Publication Date: 2021-11-05
WUHAN OPTICAL VALLEY INFORMATION OPTOELECTRONICS INNOVATION CENT CO LTD
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  • Application Information

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Problems solved by technology

[0002] Photodetectors are one of the key optoelectronic devices in optical communication, optical interconnection and optoelectronic integration technology, and are widely used in various fields of military and national economy. However, the existing photodetectors have a mode effective refractive index It has disadvantages such as difficult regulation and low responsiveness, so it needs further improvement

Method used

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  • A kind of preparation method of photodetector
  • A kind of preparation method of photodetector
  • A kind of preparation method of photodetector

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preparation example Construction

[0099] The embodiment of the present invention also provides a method for preparing a photodetector, please refer to the attached Image 6 , as shown in the figure, the method includes the following steps:

[0100] Step 601, providing a substrate, the substrate including a first semiconductor material region;

[0101] Step 602, performing an etching process on the first semiconductor material region to form an optical waveguide structure for transmitting optical signals; the optical waveguide structure includes a main waveguide portion and a secondary waveguide portion arranged at intervals along a first direction, The main waveguide and the secondary waveguide extend along a second direction, and the first direction is perpendicular to the second direction;

[0102] Step 603 , forming an optical absorption layer on the optical waveguide structure for detecting the optical signal transmitted in the optical waveguide structure.

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Abstract

The embodiment of the present invention discloses a method for fabricating a photodetector, the method comprising: providing a substrate, the substrate including a first semiconductor material region; performing an etching process on the first semiconductor material region, to forming an optical waveguide structure for transmitting optical signals; the optical waveguide structure includes a main waveguide portion and a sub-waveguide portion arranged at intervals along a first direction, the main waveguide portion and the sub-waveguide portion extend along a second direction, the The first direction is perpendicular to the second direction; an optical absorption layer for detecting the optical signal transmitted in the optical waveguide structure is formed on the optical waveguide structure.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a method for preparing a photodetector. Background technique [0002] Photodetectors are one of the key optoelectronic devices in optical communication, optical interconnection and optoelectronic integration technologies, and are widely used in various fields of military and national economy. However, the existing photodetectors have a mode effective refractive index It has shortcomings such as difficult regulation and low responsiveness, so it needs further improvement. Contents of the invention [0003] In view of this, the embodiments of the present invention provide a method for fabricating a photodetector to solve at least one problem existing in the background art. [0004] In order to achieve the above object, the technical solution of the present application is achieved in this way: [0005] An embodiment of the present invention provides a method for...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0232H01L31/109
CPCH01L31/02327H01L31/109H01L31/1804Y02P70/50
Inventor 胡晓
Owner WUHAN OPTICAL VALLEY INFORMATION OPTOELECTRONICS INNOVATION CENT CO LTD