Epitaxial wafer of ultraviolet light-emitting diode and its preparation method
A technology of light-emitting diodes and epitaxial wafers, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of limited number of holes, low concentration of p-type dopants, difficulty in p-type doping, etc. Quantity, the effect of improving the internal quantum efficiency
Active Publication Date: 2022-03-18
HC SEMITEK SUZHOU
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Problems solved by technology
[0004] In the process of realizing the present disclosure, the inventors found that the related technology has at least the following problems: holes are generated by p-type doping, and because of the difficulty of p-type doping in AlGaN materials, the electron blocking layer of p-type doped AlGaN The p-type dopant concentration is not high, and the number of holes that can be provided is relatively limited
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[0032] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.
[0033] figure 1 It is a structural schematic diagram of an epitaxial wafer of an ultraviolet light emitting diode provided by an embodiment of the present disclosure. see figure 1 , the epitaxial wafer includes: a substrate 1 and a buffer layer 2 , an undoped AlGaN layer 3 , an n-type layer 4 , an active layer 5 , an electron blocking layer 6 and a p-type layer 7 stacked sequentially on the substrate 1 .
[0034] Active layer 5 includes a plurality of quantum barrier layers 51 and a plurality of quantum well layers 52 . Quantum barrier layers 51 and quantum well layers 52 are distributed alternately. Along the deposition sequence of the plurality of quantum barrier layers 51 , the quantum barrier layer 51 a deposited last among ...
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Abstract
The disclosure provides an epitaxial wafer of an ultraviolet light-emitting diode and a preparation method thereof, belonging to the field of light-emitting diodes. The epitaxial wafer includes: a substrate and a buffer layer sequentially stacked on the substrate, an undoped AlGaN layer, an n-type layer, an active layer, an electron blocking layer and a p-type layer, and the active layer includes multiple Quantum barrier layers and multiple quantum well layers, the quantum barrier layers and the quantum well layers are distributed alternately, along the deposition sequence of the multiple quantum barrier layers, the last deposited quantum barrier layer among the quantum barrier layers is a p-type doped quantum barrier layer, and the last deposited quantum barrier layer is in contact with the electron blocking layer. The present disclosure can improve the internal quantum efficiency of the ultraviolet light emitting diode.
Description
technical field [0001] The disclosure relates to the field of light-emitting diodes, in particular to an epitaxial wafer of an ultraviolet light-emitting diode and a preparation method thereof. Background technique [0002] Ultraviolet LED (Light Emitting Diode, light-emitting diode) has broad market application prospects. For example, ultraviolet LED phototherapy instrument is a very popular medical device in the future, but UV LED technology is still in the growth stage, and problems such as low internal quantum efficiency restrict AlGaN substrates. UV LEDs go a step further. [0003] In order to improve the internal quantum efficiency of the epitaxial wafer of AlGaN-based ultraviolet light-emitting diodes, related technologies provide an epitaxial wafer of AlGaN-based ultraviolet light-emitting diodes, the structure of which includes: a substrate and a buffer layer grown on the substrate in sequence, n-type layer, an active layer, an electron blocking layer and a p-type ...
Claims
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IPC IPC(8): H01L33/06H01L33/26H01L33/14H01L33/00
CPCH01L33/06H01L33/26H01L33/145H01L33/005
Inventor 乔楠李昱桦刘旺平刘源
Owner HC SEMITEK SUZHOU