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Avalanche photodetector and preparation method thereof

A photodetector and avalanche photoelectric technology, applied in the field of photodetectors, can solve problems such as low quantum efficiency and narrow bandwidth, and achieve the effects of small series resistance, small dark current and high reliability

Active Publication Date: 2021-02-19
武汉敏芯半导体股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, the InGaAs / AlInAs-APD detectors in the prior art still have problems such as low quantum efficiency and narrow bandwidth.

Method used

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  • Avalanche photodetector and preparation method thereof
  • Avalanche photodetector and preparation method thereof
  • Avalanche photodetector and preparation method thereof

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Embodiment Construction

[0036] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation or position indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, therefore It should not be construed as a limitation of the present invention.

[0037] In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indic...

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Abstract

The invention discloses an avalanche photodetector and a preparation method thereof. The epitaxial structure of the photodetector sequentially comprises an SI-InP(Fe) substrate, an N-InP buffer layer,an N-contact layer, an N-conductive layer, an avalanche multiplication layer, an electric field control layer, an AlGaInAs band gap transition layer, a light absorption layer, an InGaAsP band gap transition layer, a light window layer and a P-contact layer from bottom to top. The photodetector also comprises a Zn diffusion region formed in the P-contact layer, the light window layer, the InGaAsPband gap transition layer and the light absorption layer, an N-type electrode arranged on the N-contact layer, and a P-type electrode arranged on the Zn diffusion region, wherein the N-contact layer,the P-contact layer and the light window layer are all prepared from an InGaAsP material. According to the invention, the N-contact layer, the P-contact layer and the light window layer are all prepared from the InGaAsP material, so that the light absorption efficiency can be effectively improved, the series resistance of the device can be improved, the bandwidth of the device can be improved, andthe manufacturing process flow of the device is enabled to be simpler; and the product reliability of the optical detector provided by the invention is improved.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detectors, and in particular relates to an avalanche photoelectric detector and a preparation method thereof. Background technique [0002] Avalanche photodetector, also known as APD detector, is a photodetector that works under reverse bias voltage, converts optical signal into electrical signal through photoelectric conversion, and multiplies and amplifies the photocurrent through impact ionization. Compared with PIN detectors, APD detectors have higher sensitivity due to their internal gain, and near-infrared light at 1.31 μm and 1.55 μm is suitable for optical fiber transmission systems due to their low loss and low dispersion in optical fibers. The wavelength of 1.55 μm can also be used for three-dimensional imaging of quantum key distribution, lidar, atmospheric monitoring and the safety monitoring of the human brain, etc. Therefore, researching and making InGaAs / AlInAs-APD detectors ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/107H01L31/0216H01L31/0304H01L31/18
CPCH01L31/02161H01L31/03046H01L31/107H01L31/1844Y02P70/50
Inventor 徐之韬王权兵王丹余沛王任凡
Owner 武汉敏芯半导体股份有限公司