Forming method of semiconductor memory
A memory and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problem of poor uniformity of capacitor hole aperture, and achieve the effect of improving uniformity and performance
Pending Publication Date: 2021-03-05
CHANGXIN MEMORY TECH INC
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Problems solved by technology
[0005] The invention provides a method for forming a semiconductor memory, which is used to solve the problem of poor uniformity of the capacitance holes in the existing semiconductor memory, so as to improve the performance of the semiconductor memory
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[0053] The specific implementation of the method for forming a semiconductor memory provided by the present invention will be described in detail below in conjunction with the accompanying drawings.
[0054] attached Figure 1A , 1B is a schematic diagram of a mask structure formed in the prior art. At present, due to the low etching selectivity, the capacitor hole patterns formed in the mask structure are deep and shallow, such as Figure 1A Among them, the depth of the first capacitive hole pattern 121 is smaller than the depth of the second capacitive hole pattern 122 . When the substrate is etched with this mask structure, the difference in depth will lead to the uneven size of the capacitor holes formed in the substrate during the etching process, for example Figure 1B The aperture diameter of the first capacitor hole 131 is smaller than the aperture diameter of the second capacitor hole 132 . The uneven distribution of capacitive holes in the substrate will seriously ...
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The invention relates to the technical field of semiconductor manufacturing, in particular to a forming method of a semiconductor memory. The forming method of the semiconductor memory comprises the following steps: forming a first etching pattern on the surface of a substrate, wherein the first etching pattern comprises a first mask layer, a second mask layer and a first groove extending along afirst direction; backfilling the first groove; removing the second mask layer to form a first mask structure; a second etching pattern is formed on the surface of the first mask structure, the secondetching pattern comprises a third mask layer, a fourth mask layer and a second groove extending in the second direction, and the first direction intersects with the second direction; the second grooveis backfilled; removing the fourth mask layer to form a second mask structure; and etching a substrate by taking the first mask structure and the second mask structure as mask patterns to form a plurality of capacitance holes with the same aperture. The method improves the uniformity of the aperture of the capacitance holes in the semiconductor memory.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor memory. Background technique [0002] DRAM (Dynamic Random Access Memory, DRAM) is a semiconductor device commonly used in electronic equipment such as computers, which is composed of a plurality of storage units, and each storage unit usually includes a transistor and a capacitor. The gate of the transistor is electrically connected to the word line, the source is electrically connected to the bit line, and the drain is electrically connected to the capacitor. The word line voltage on the word line can control the opening and closing of the transistor, so that the stored data can be read through the bit line. Data information in the capacitor, or write data information into the capacitor. [0003] With the rapid development of semiconductor technology, the size of semiconductor process becomes smaller and smaller, and the...
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IPC IPC(8): H01L21/8242H10B12/00
CPCH10B12/03H10B12/038H10B12/0387
Inventor 刘欣然
Owner CHANGXIN MEMORY TECH INC