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Thin film transistor and preparation method thereof

A thin-film transistor and electrode layer technology, which is applied in the manufacture of transistors, semiconductor/solid-state devices, semiconductor devices, etc., can solve problems such as difficult to form protrusions, and achieve the effect of improving light leakage and product contrast.

Active Publication Date: 2021-03-12
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, common barrier layer materials are difficult to form a tail, and the barrier layer / copper structure will have an undercut (undercut structure)

Method used

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  • Thin film transistor and preparation method thereof
  • Thin film transistor and preparation method thereof
  • Thin film transistor and preparation method thereof

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preparation example Construction

[0058] The present application provides a preparation method of a thin film transistor, the preparation method comprising the following steps: a step of preparing a composite electrode on a substrate, wherein the composite electrode includes a barrier layer and an electrode layer, and the barrier layer is opposite to the The electrode layer has a protrusion, the orthographic projection of the protrusion on the electrode layer protrudes from the electrode layer, and the length of the protrusion is in the range of 0.3um-0.5um.

[0059] The preparation method of the thin film transistor described in this application can obtain a barrier layer 21 with a longer protrusion 211, which can improve light leakage and improve product contrast; in addition, the preparation method described in this application can also overcome the existing barrier layer / electrode layer There is an undercut problem in the structure.

[0060] Wherein, the preparation method of described composite electrode ...

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Abstract

The invention provides a thin film transistor and a preparation method thereof, the thin film transistor comprises at least one composite electrode, the composite electrode comprises a barrier layer and an electrode layer, and the barrier layer is provided with a protruding part relative to the electrode layer. The orthographic projection of the protruding part on the composite electrode protrudesout of the orthographic projection of the electrode layer on the composite electrode; the range of the length of the protruding part is 0.3 [mu] m to 0.5 [mu] m; according to the thin film transistorlayer and the preparation method, by forming the barrier layer with the protruding part, undercut of the barrier layer / Cu structure can be prevented, light leakage can be improved, and the product contrast can be improved.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a thin film transistor and a preparation method thereof. Background technique [0002] With the development of display technology, people have higher and higher requirements for the image quality of LCD displays, so it is urgent to improve the contrast of LCD displays. [0003] However, in an LCD display, when the polarization direction of the polarized light incident on the backlight is not parallel or perpendicular to the metal edge, the electric field of the polarized light will excite electrons on the surface of the metal edge, thereby changing the polarization direction of the polarized light, resulting in partial polarization The light is emitted from the upper polarizer, causing light leakage, which leads to light leakage in the dark state, and the contrast of the product is reduced. [0004] In addition, in the existing TFT panel, the copper (Cu) process becom...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/417H01L29/423H01L29/786H01L21/336
CPCH01L29/41733H01L29/42384H01L29/786H01L29/66742H01L29/7869H01L29/4908H01L29/45
Inventor 胡小波
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD