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Thin film transistor and method of making the same

A technology of thin film transistors and electrode layers, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as difficult formation of protrusions, and achieve the effect of improving light leakage and product contrast

Active Publication Date: 2022-07-12
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, common barrier layer materials are difficult to form a tail, and the barrier layer / copper structure will have an undercut (undercut structure)

Method used

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  • Thin film transistor and method of making the same
  • Thin film transistor and method of making the same
  • Thin film transistor and method of making the same

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preparation example Construction

[0058] The present application provides a method for preparing a thin film transistor, which includes the following steps: a step of preparing a composite electrode on a substrate, wherein the composite electrode includes a barrier layer and an electrode layer, and the barrier layer is opposite to the other. The electrode layer has a protruding part, the orthographic projection of the protruding part on the electrode layer protrudes from the electrode layer, and the length of the protruding part ranges from 0.3um to 0.5um.

[0059] The preparation method of the thin film transistor described in the present application can obtain a barrier layer 21 with a longer protrusion 211, which can improve light leakage and product contrast; in addition, the preparation method described in the present application can also overcome the existing barrier layer / electrode layer There is an undercut problem in the structure.

[0060] Wherein, the preparation method of the composite electrode co...

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Abstract

The present application provides a thin film transistor and a preparation method thereof. The thin film transistor includes at least one composite electrode, and the composite electrode includes a barrier layer and an electrode layer, wherein: the barrier layer has a protrusion relative to the electrode layer, The orthographic projection of the protruding portion on the composite electrode protrudes from the orthographic projection of the electrode layer on the composite electrode; and the length of the protruding portion is in the range of 0.3um-0.5um; the thin film transistor layer And the preparation method can prevent the barrier layer / Cu structure from being undercut by forming the barrier layer with the protruding part, and can also improve the light leakage and improve the product contrast.

Description

technical field [0001] The present application relates to the field of display technology, and in particular, to a thin film transistor and a preparation method thereof. Background technique [0002] With the development of display technology, people have higher and higher requirements on the picture quality of LCD displays, so it is urgent to improve the contrast ratio of LCD displays. [0003] However, in an LCD display, when the polarization direction of the polarized light incident from the backlight is not parallel or perpendicular to the metal edge, the electric field of the polarized light excites electrons on the surface of the metal edge, which in turn changes the polarization direction of the polarized light, eventually leading to partial polarization. Light is emitted from the upper polarizer, causing light leakage, resulting in dark-state light leakage and reduced product contrast. [0004] In addition, in the existing TFT panel, copper (Cu) process has become t...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/417H01L29/423H01L29/786H01L21/336
CPCH01L29/41733H01L29/42384H01L29/786H01L29/66742H01L29/7869H01L29/4908H01L29/45
Inventor 胡小波
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD