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Single-ring MOS device and manufacturing method thereof

A technology of MOS devices and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as poor withstand voltage performance

Pending Publication Date: 2021-03-19
ADVANCED SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a single-ring MOS device and its manufacturing method in order to overcome the defect of poor withstand voltage performance of the single-ring MOS device produced in the prior art

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  • Single-ring MOS device and manufacturing method thereof
  • Single-ring MOS device and manufacturing method thereof
  • Single-ring MOS device and manufacturing method thereof

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Embodiment Construction

[0028] The present invention is further described below by means of a preferred embodiment, but the present invention is not limited to the scope of the described embodiment.

[0029] This embodiment provides a method for fabricating a single-ring MOS device. refer to image 3 , the fabrication method of the single-ring MOS device includes the following steps:

[0030] In step S10, a heavily doped n-type substrate layer is formed on the backside of the semiconductor substrate, and an n-type epitaxial layer is formed on the frontside of the semiconductor substrate. refer to Figure 4 , the heavily doped n-type substrate layer 103 is formed on the back side of the semiconductor substrate 1 , and the n-type epitaxial layer 104 is located on the front side of the semiconductor substrate 1 .

[0031] Step S11, implanting first dopant ions into the target region of the semiconductor substrate. refer to Figure 5 , the target region 101 is disposed on the upper surface of the n-...

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Abstract

The invention discloses a single-ring MOS device and a manufacturing method thereof. The manufacturing method of the single-ring MOS device comprises the following steps: injecting first doping ions into a target region of a semiconductor substrate; and in the process of thermal diffusion in a furnace tube, injecting oxygen into the furnace tube to form an oxide layer on the upper surface of the semiconductor substrate, and enabling the first doping ions to diffuse into the semiconductor substrate to form a protection ring. In the manufacturing process of the single-ring MOS device, oxygen isadded in the advancing process of the furnace tube, an oxide layer with a protective effect is rapidly formed on the surface of the semiconductor substrate, and the voltage resistance of the single-ring MOS device is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of MOS (Metal Oxide Semiconductor, metal oxide semiconductor) device fabrication, and in particular relates to a single-ring MOS device and a fabrication method thereof. Background technique [0002] In the existing MOS manufacturing process, the furnace tube advancement (ie furnace tube diffusion) process is mostly driven by pure nitrogen gas of 15L / min (liters per minute), the purpose is to protect the surface of the semiconductor substrate with an inert gas, which can meet the Fabrication requirements for polycyclic MOS with multiple guard rings. However, for a new generation of single-ring MOS devices with one guard ring, the size of the die (bare chip) is reduced, and the process requirements for the guard ring are more stringent. The process of making the guard ring of the single-ring MOS device according to the existing technology is as follows: First, refer to figure 1 , implanting dopant ions into...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/225H01L29/06H01L29/78
CPCH01L21/2253H01L29/66477H01L29/0619H01L29/78
Inventor 刘东栋张洁
Owner ADVANCED SEMICON MFG CO LTD