Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for removing pollutants on surface of high-purity antimony

A pollutant, high-purity technology, applied in the field of purification, can solve the problem of difficult removal of pollutants, and achieve the effect of short process

Active Publication Date: 2021-03-26
广东先导微电子科技有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] During the preparation of high-purity antimony, oxides and carbon powder often exist on the surface, and these pollutants are difficult to remove

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Step 1: Put high-purity antimony and sodium chloride and lithium chloride in a molar ratio of 1:1 into a quartz crucible.

[0035] Step 2: The thickness of the melted salt is 5 mm, and the temperature is raised to 650°C under an inert atmosphere to melt the salt and antimony and then start to cool down.

[0036] Step 3: Then take out the high-purity antimony and ultrasonically clean it with pure water until the conductivity of the cleaned water is the same as that before cleaning.

[0037] Step 4: drying at 80°C under vacuum.

[0038] The high-purity antimony obtained in this example has a bright surface and no pollutants.

Embodiment 2

[0040] Step 1: Put high-purity antimony and lithium chloride and potassium chloride in a molar ratio of 1:1 into a quartz crucible.

[0041] Step 2: The thickness of the melted salt is 10mm. After heating up to 650°C under vacuum to melt salt and antimony, the temperature starts to drop.

[0042] Step 3: Then take out the high-purity antimony and ultrasonically clean it with pure water until the conductivity of the cleaned water is the same as that before cleaning.

[0043] Step 4: drying at 60°C under vacuum.

[0044] The high-purity antimony obtained in this example has a bright surface and no pollutants.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for removing pollutants on the surface of high-purity antimony. The method comprises the following steps: step 1, charging is performed; high-purity antimony and salt are charged into a crucible; the salt does not react with the antimony; the melting point of the salt is lower than that of the antimony; the density of the salt is lower than that of the antimony; thesalt can be dissolved into water; step 2, the materials are heated and melted; under the condition that antimony is not in contact with oxygen, high-purity antimony and salt are heated and melted; then the high-purity antimony and salt are cooled and solidified; the high-purity antimony is solidified prior to the salt; step 3, a cleaning stage is performed; the solidified salt and high-purity antimony are taken out from the crucible; and the solidified salt is washed off with pure water; step 4, a drying stage is performed; and the high-purity antimony obtained in the step 3 is dried under avacuum condition. The high-purity antimony obtained through the method is bright in surface and free of pollutants.

Description

technical field [0001] The invention relates to the field of purification, in particular to a method for removing high-purity antimony surface pollutants. Background technique [0002] Antimony is a silver-white shiny hard and brittle metal, 60% of antimony is used to produce flame retardants, and 20% of antimony is used to make alloy materials in batteries, sliding bearings and welding agents. The use of antimony in the semiconductor industry is growing, mainly as a dopant in ultra-high conductivity n-type silicon wafers, which are used in the production of diodes, infrared detectors and Hall effect elements. Indium antimonide and gallium antimonide are materials used to make mid-infrared detectors. [0003] During the preparation of high-purity antimony, oxides and carbon powder often exist on the surface, and these pollutants are difficult to remove. In semiconductor applications, contamination on the surface of high-purity antimony will affect the performance of device...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C22B30/02C22B9/10
CPCC22B30/02C22B9/106Y02P10/20
Inventor 狄聚青朱刘刘运连李镇宏
Owner 广东先导微电子科技有限公司