Anti-radiation static random access memory unit and memory
A memory cell, static random technology, applied in the field of microelectronics, can solve problems such as loss, memory cell failure, error, etc., to achieve the effect of improving electrical performance and improving the ability to resist single event effects
Pending Publication Date: 2021-03-26
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
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Problems solved by technology
Apparently, if the interlocked inverters were reversed by a high-energy particle attack, it would cause the entire memory cell to fail
Therefore, SRAMs that work in some special environments (such as space) need to be hardened against radiation to avoid errors in storing data and even cause huge losses
Method used
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[0011] The radiation-resistant SRAM unit and the specific implementation of the memory provided by the present invention will be described in detail below in conjunction with the accompanying drawings.
[0012] attached figure 2 Shown is a circuit diagram of the SRAM unit in this specific embodiment, including a first pass transistor PG1 and a second pass transistor PG2 electrically connected in series. Both the first pass transistor PG1 and the second pass transistor PG2 are N-type transistors. Two opposing interlocked first and second inverters are connected in parallel between the first pass transistor PG1 and the second pass transistor PG2. The first inverter is composed of a P-type pull-up transistor PU1 and an N-type pull-down transistor PD1, and the second inverter is composed of a P-type pull-up transistor PU2 and an N-type pull-down transistor PD2.
[0013] Continue to refer to the attached figure 2 , in order to realize the anti-radiation function, the SRAM unit...
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The invention provides an anti-radiation static random access memory unit, and the memory unit comprises a first transmission transistor and a second transmission transistor which are electrically connected in series, and a first phase inverter and a second phase inverter which are oppositely interlocked and are connected between the first transmission transistor and the second transmission transistor in parallel; pull-up transistors of the first phase inverter and the second phase inverter are connected with the input ends of the phase inverters through a first time delay transistor and a second time delay transistor respectively, the time delay transistors are N-type transistors, and grid electrodes of the time delay transistors are electrically connected with the word line level of thestatic random access memory. Two transistors are added on the basis of an original traditional six-transistor storage unit to improve the single event effect resistance of the unit, and the back gatestructure of the FDSOI device is connected with the potential to improve the electrical performance of the unit.
Description
technical field [0001] The invention relates to the field of microelectronics, in particular to a radiation-resistant static random access memory unit and memory. Background technique [0002] SRAM is widely used in electronic equipment because of its good performance. attached figure 1 Shown is a typical six-transistor SRAM storage unit in the prior art. Apparently, if the interlocked inverters were reversed by a high-energy particle attack, the entire memory cell would fail. Therefore, SRAMs working in some special environments (such as space) need to be hardened against radiation to avoid errors in stored data and even cause huge losses. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a radiation-resistant SRAM unit and a memory. [0004] In order to solve the above problems, the present invention provides a radiation-resistant static random access memory unit, including a first pass transistor and a secon...
Claims
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IPC IPC(8): G11C7/24G11C5/06G11C11/411
CPCG11C7/24G11C5/063G11C11/411
Inventor 陈静吕迎欢葛浩谢甜甜王青
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI