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Thin film transistor and manufacturing method thereof, and display panel

A technology of thin film transistor and manufacturing method, applied in transistor, semiconductor/solid-state device manufacturing, semiconductor device and other directions, can solve problems such as increased off-state leakage current

Active Publication Date: 2021-04-02
BEIHAI HKC OPTOELECTRONICS TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the light-shielding layer can only block the light emitted by the backlight source, and some light still enters the active layer through diffraction and scattering, causing the off-state leakage current to increase.

Method used

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  • Thin film transistor and manufacturing method thereof, and display panel
  • Thin film transistor and manufacturing method thereof, and display panel
  • Thin film transistor and manufacturing method thereof, and display panel

Examples

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Embodiment Construction

[0052] Specific structural and functional details disclosed herein are representative only and are for purposes of describing example embodiments of the present application. This application may, however, be embodied in many alternative forms and should not be construed as limited to only the embodiments set forth herein.

[0053]In the description of this application, it should be understood that the terms "central", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", The orientation or positional relationship indicated by "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the application and simplifying the description, rather than indicating or implying the referred device Or elements must have a certain orientation, be constructed and operate in a certain orientation, and thus should not be construed as limiting the application. In addition,...

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PUM

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Abstract

The invention discloses a thin film transistor and a manufacturing method thereof, and a display panel. The thin film transistor comprises a shading layer formed on a substrate, an active layer formedon the shading layer, a grid electrode formed above the active layer, and a source electrode and a drain electrode formed above the grid electrode, wherein the source electrode and the drain electrode are electrically connected with the active layer through contact holes respectively; and the edge of the active layer is provided with a light blocking part which is made of a shading material. According to the invention, the increase of leakage current caused by light entering the active layer can be reduced, so the quality of the TFT is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method thereof, and a display panel. Background technique [0002] With the acceleration of the information age, display devices occupy a very important position in the development of information technology. The display screens on various instruments provide a lot of information for people's daily life and work. Without monitors, there would be no information technology with today's rapid development. The display integrates electronics, communication and information processing technologies, and is considered to be another major development opportunity for the electronics industry after microelectronics and computers in the 20th century. Thin filmtransistor-liquid crystal display (TFT-LCD) has been widely used in life and work because of its good brightness, high contrast, strong layering, bright colors, simple manufacture, and stable perf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336H01L21/34G02F1/1368
CPCH01L29/78606H01L29/78651H01L29/7869H01L29/6675H01L29/66969G02F1/1368
Inventor 刘凯军周佑联许哲豪康报虹
Owner BEIHAI HKC OPTOELECTRONICS TECH CO LTD