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Method for controlling double-sided parallelism and overall thickness of semiconductor power module

A technology of power modules and control methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as increased module manufacturing costs and module damage, and achieve simplified manufacturing processes, improved performance, The effect of convenient mechanical installation and heat dissipation form

Inactive Publication Date: 2021-04-16
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this not only increases the manufacturing cost of the module, but also easily damages the module during the mechanical grinding process.

Method used

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  • Method for controlling double-sided parallelism and overall thickness of semiconductor power module

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Embodiment Construction

[0016]In order to solve the problem of excessive thickness in the module package, the problem affects the next plastic seal process, the present invention employs a layer or multi-layer contractionable connection material (second layer connection material), under the action of external pressure, introduced The connection material can make appropriate shrinkage to compensate for the impact of the tolerance.

[0017]The second layer of attachment material may be an organic polymer material such as an epoxy resin or a cyanate resin, and the initial thickness in the pressureless state can be 50-500 microns. In the operation process:

[0018](1) First place the second layer connecting material outside the power module upper and lower substrates to ensure the degree of cleaning of the substrate and no bubbles at the interface;

[0019](2) According to the different needs of the second layer of connection materials, the module temperature is controlled at its softening temperature range, typically ...

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Abstract

The invention belongs to the technical field of semiconductor power modules, and particularly relates to a method for controlling the double-sided parallelism and the overall thickness of a semiconductor power module. According to the invention, a second layer of a connecting material is introduced on the basis of the design of a traditional semiconductor power module, so accurate and effective control over the double-sided parallelism and the overall thickness of the power module is achieved. The method specifically comprises the steps that the second layer of material is attached to the upper surface and the lower surface of the power module before an injection molding process; an outer layer material is attached to the outer surface of the second layer of connecting material to protect the internal structure of the module; and mold closing and cuing are conducted. A pressure borne by the power module is gradually increased, so a second connecting layer deforms, and the purpose of controlling the parallelism and the overall thickness of the module is achieved. According to the invention, a manufacturing process of the power module can be simplified, the yield is improved, the electromagnetic interference of a system is reduced, and the performance of the power module is further improved.

Description

Technical field[0001]The present invention belongs to the technical field of semiconductor power modules, and specifically, the control method of double-sided parallelism and overall thickness of the semiconductor power module.Background technique[0002]Semiconductor power modules are widely used in industrial frequency conversion, converters, automotive motor controllers, etc., the basic structure, such asfigure 1As shown, the power semiconductor device is bonded to a ceramic substrate or a copper substrate by a connection material (usually solder or metal sintering). In order to enhance its heat dissipation performance, the upper surface of the semiconductor device is typically connected to the metal spacer using the same process, and then the upper layer substrate is again connected. Due to the presence of tolerances during material manufacturing, the overall tolerance is large after multiple connection processes, and does not satisfy the requirements of direct next plastic seal. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/50H01L21/56H01L23/00H01L23/367H01L23/373H01L23/552
Inventor 雷光寅邹强范志斌
Owner FUDAN UNIV