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Near-infrared LED with strain preset layer structure and manufacturing method thereof

A manufacturing method and pre-layer technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as excessive pressure strain of quantum wells, affecting LED performance, dislocation defects, etc., to achieve balanced pressure strain and suppress dislocations and the generation of cracks, and the effect of improving crystal quality

Active Publication Date: 2021-04-30
南昌凯捷半导体科技有限公司
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Due to the high In composition of the InGaAs quantum wells of near-infrared LEDs, when the traditional structure is used for growth, the quantum well pressure strain is too large to cause mismatch, high-density dislocation defects or cracks, which seriously affect the performance of the LED.

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  • Near-infrared LED with strain preset layer structure and manufacturing method thereof
  • Near-infrared LED with strain preset layer structure and manufacturing method thereof

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[0032] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. The following description of at least one exemplary embodiment is merely illustrative in nature and in no way serves as any limitation of the application, its application or uses. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0033] In the description of this application, it should be understood that the use of words such as "first" and "second" to define parts is only for the convenience of distinguishing corresponding parts. Therefore, it should not be construed as a limitation of the protection scope of this application.

[0034] I...

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Abstract

The invention provides a near-infrared LED with a strain preset layer structure and a manufacturing method of the near-infrared LED. An epitaxial wafer of the near-infrared LED sequentially grows an N-GaAs buffer layer, an N-GaInP corrosion cut-off layer, an N-GaAs contact layer, an N-GaInP electrode strengthening layer, an N-AlxGa1-xAs current expanding layer, an N-AlxGa1-xAs limiting layer, an N-GaxIn1-xP strain preset layer, a first AlxGa1-xAs Space layer, an active layer and a second AlxGa1-xAs Space layer, a P-AlxGa1-xAs limiting layer, a P-AlxGa1-xAs current expending layer, a P-transition layer and a P-GaP contact layer. According to the invention, the N-GaxIn1-xP strain preset layer is inserted between the N-AlxGa1-xAs limiting layer and the first AlxGa1-xAs Space layer in a conventional structure, and the strain state of the first AlxGa1-xAs Space layer is adjusted to tensile strain, thereby balancing the compressive strain of an InGaAs quantum well to a certain degree, inhibiting the dislocation and cracks, and improving the crystal quality of an active region.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a near-infrared LED with a strain preset layer structure and a manufacturing method thereof. Background technique [0002] With the development of the times, near-infrared light sources have gradually begun to be used in the consumer industry from the field of optical communications, such as remote control, identification, detection and sensing, and other applications are becoming more and more extensive. Especially with the application of new technologies such as face recognition, 3D imaging, and eye tracking on mobile phones and various intelligent mobile terminal platforms, the popularity of infrared light sources has been greatly promoted. In addition, in order to maintain social order and crack down on crimes, the country has also vigorously promoted the establishment of a skynet monitoring system in recent years, and the market demand for security monitoring e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12H01L33/06H01L33/30H01L33/00
CPCH01L33/0062H01L33/06H01L33/12H01L33/30
Inventor 熊欢林晓珊徐培强潘彬王向武
Owner 南昌凯捷半导体科技有限公司