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A kind of near-infrared led with strained preset layer structure and its manufacturing method

A manufacturing method and pre-layer technology, applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as mismatch, affecting LED performance, and dislocation defects

Active Publication Date: 2021-07-06
南昌凯捷半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Due to the high In composition of the InGaAs quantum wells of near-infrared LEDs, when the traditional structure is used for growth, the quantum well pressure strain is too large to cause mismatch, high-density dislocation defects or cracks, which seriously affect the performance of the LED.

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  • A kind of near-infrared led with strained preset layer structure and its manufacturing method
  • A kind of near-infrared led with strained preset layer structure and its manufacturing method

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[0032] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. The following description of at least one exemplary embodiment is merely illustrative in nature and in no way serves as any limitation of the application, its application or uses. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0033] In the description of this application, it should be understood that the use of words such as "first" and "second" to define parts is only for the convenience of distinguishing corresponding parts. Therefore, it should not be construed as a limitation of the protection scope of this application.

[0034] I...

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Abstract

The present invention provides a near-infrared LED with a strain preset layer structure and a manufacturing method thereof. The epitaxial wafer of the near-infrared LED is sequentially grown with an N-GaAs buffer layer, an N-GaInP corrosion stop layer, N‑GaAs contact layer, N‑GaInP electrode strengthening layer, N‑AlxGa1‑xAs current spreading layer, N‑AlxGa1‑xAs confinement layer, N‑GaxIn1‑xP strain presetting layer, first AlxGa1‑xAs Space layer, active Layer, second AlxGa1‑xAs Space layer, P‑AlxGa1‑xAs confinement layer, P‑AlxGa1‑xAs current spreading layer, P‑transition layer and P‑GaP contact layer. The present invention adjusts the strain state of the first AlxGa1-xAs Space layer by inserting a layer of N-GaxIn1-xP strain preset layer between the N-AlxGa1-xAs confinement layer and the first AlxGa1-xAs Space layer in the traditional structure It is a tensile strain, and then balances the compressive strain of the InGaAs quantum well to a certain extent, suppresses the generation of dislocations and cracks, and improves the crystal quality of the active region.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a near-infrared LED with a strain preset layer structure and a manufacturing method thereof. Background technique [0002] With the development of the times, near-infrared light sources have gradually begun to be used in the consumer industry from the field of optical communications, such as remote control, identification, detection and sensing, and other applications are becoming more and more extensive. Especially with the application of new technologies such as face recognition, 3D imaging, and eye tracking on mobile phones and various intelligent mobile terminal platforms, the popularity of infrared light sources has been greatly promoted. In addition, in order to maintain social order and crack down on crimes, the country has also vigorously promoted the establishment of a skynet monitoring system in recent years, and the market demand for security monitoring e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/12H01L33/06H01L33/30H01L33/00
CPCH01L33/0062H01L33/06H01L33/12H01L33/30
Inventor 熊欢林晓珊徐培强潘彬王向武
Owner 南昌凯捷半导体科技有限公司