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Method for adapting NFTL algorithm to NAND Flash and storage device

A storage device and algorithm technology, applied in the field of NFTL algorithm adaptation to NAND Flash, can solve the problem that NFTL management algorithm cannot be well adapted to high-tech NAND Flash

Active Publication Date: 2021-05-07
成都三零嘉微电子有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] The purpose of the present invention is to overcome the deficiencies in the prior art, to provide a method and a storage device for adapting the NFTL algorithm to NAND Flash, so that the NFTL algorithm can be adapted to MLC and TLC NAND Flash It solves the problem that the NFTL management algorithm cannot be well adapted to high-tech NAND Flash, which has practical significance for the development of high-speed storage devices and can be widely used in the management of NAND Flash of storage devices, etc.

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  • Method for adapting NFTL algorithm to NAND Flash and storage device
  • Method for adapting NFTL algorithm to NAND Flash and storage device
  • Method for adapting NFTL algorithm to NAND Flash and storage device

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Embodiment Construction

[0034] All features disclosed in all embodiments in this specification, or steps in all implicitly disclosed methods or processes, except for mutually exclusive features and / or steps, can be combined and / or extended and replaced in any way. The data structure PAGE_REMAP of the present invention, PAGE_REMAP is self-defined name.

[0035] Such as Figure 1~4 As shown, the method of adapting the NFTL algorithm to NAND Flash remaps the physical address written into NAND Flash with the address calculated by the NFTL algorithm, and the addresses for completing data writing to NAND Flash are continuous.

[0036] Further, use the data structure PAGE_REMAP to record the physical page number written into NANDFlash and record the mapping relationship between the NANDFlash calculated by the NFTL algorithm; the free unit number of the data structure PAGE_REMAP is used as the page offset for data writing The amount of displacement and the number of free units are accumulated sequentially. ...

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Abstract

The invention discloses a method for adapting an NANDFlash through an NFTL algorithm and a storage device. The method comprises the steps: performing remapping on a physical address written into the NANDFlash and an address obtained through calculation of the NFTL algorithm, wherein the address for completing writing of data into the NANDFlash is continuous. According to the method and the system, the NFTL algorithm can be adapted to the MLC and the TLCNANDFlash, the problem that the NFTL management algorithm cannot be well adapted to the high-process NANDFlash is solved, and the method and the system have practical significance for developing high-speed storage equipment and can be widely applied to management of the NANDFlash of the storage equipment and the like.

Description

technical field [0001] The present invention relates to the management field of NAND Flash of a storage device, and more specifically, relates to a method for adapting an NFTL algorithm to a NAND Flash and a storage device. Background technique [0002] The vigorous development of the semiconductor industry has led to the emergence of high-performance memory NAND Flash. NAND Flash memory uses semiconductors as storage devices and has the advantages of high speed, low energy consumption and shock resistance. It is widely used in portable storage devices such as U disks and SD cards and now Among the most popular solid-state drives. At present, NAND Flash is divided into several categories such as SLC, MLC and TLC. Among them, SLC is Single-Level Cell, which means that each storage unit only stores 1bit information, and the data is output by the presence or absence of electron capture state in the floating gate (even in the state of 0, there are still electrons in the floatin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/06G06F12/1009
CPCG06F12/0615G06F12/1009Y02D10/00
Inventor 王志奇何欣霖何卫国
Owner 成都三零嘉微电子有限公司