Novel electrostatic adsorption chuck
An electrostatic adsorption and chucking technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as production difficulties, wafer jumping, and unsatisfactory cooling effects
Pending Publication Date: 2021-05-07
杭州晶通科技有限公司
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Problems solved by technology
[0007] Purpose of the invention: The purpose of the present invention is to solve the problem that the existing electrostatic chuck has a complex structure, high cost due to production difficulties, cannot provide a large air flow, the cooling effect is not satisfactory, and the wafer jumps due to too large air flow
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Embodiment 1
[0044] like Figure 1 to Figure 5As shown, a new type of electrostatic adsorption chuck includes a circular chuck formed by cooperating with two aluminum semi-disc surfaces 1, an insulating layer 2 is provided at the joint between the two aluminum semi-disc surfaces 1, and an aluminum disc surface 1 has an The ceramic layer 3 is provided with a C-shaped boss 4 at the center of the two semi-disc surfaces, and the C-shaped boss 4 is provided with a C-shaped groove 5 extending to the power supply. The upper surface of the C-shaped boss 4 and the groove wall are both A continuous titanium and titanium nitride coating 6 is provided, so that the electrostatic voltage on the upper surface of the C-shaped boss 4 can be directly connected to the power supply (not shown, this power supply is an adjustable power supply, and the output can be automatically controlled according to the neutral ground ) As a neutral ground, the circular chuck is formed on the ceramic layer 3 from the center ...
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The invention discloses a novel electrostatic adsorption chuck. The chuck comprises a circular chuck formed by matching two aluminum semicircular chuck surfaces together, ceramic layers are arranged on the aluminum chuck surfaces, C-shaped bosses are arranged at the circle center positions of the two semicircular chuck surfaces respectively, and C-shaped grooves extending to a power source are formed in the C-shaped bosses. Titanium and titanium nitride coatings are arranged on the upper surface and the groove wall of the C-shaped boss, so that electrostatic voltage on the upper surfaces of the C-shaped bosses can be directly connected to a power source to serve as neutral ground; and the two semicircular disc faces form a plurality of flow guide ring grooves which are different in radial direction and diffuse outwards from the circle center on the ceramic layer. On the ceramic layer, a plurality of diversion wire grooves facing the periphery of the semicircular disc face are formed in the flow guide ring groove in the innermost layer, a plurality of titanium small-area contact points are arranged on a plurality of ceramic faces formed by the flow guide ring grooves and the flow guide wire grooves in a surrounding mode, a plurality of air outlet holes are formed in the disc face, close to the outermost periphery, of the semicircular disc face in the circumferential direction, and a plurality of air inlet holes are formed in the semicircular disc surface close to the C-shaped boss.
Description
technical field [0001] The invention relates to the technical field of semiconductor packaging, in particular to a novel electrostatic adsorption chuck. Background technique [0002] The front-end FAB factory in the semiconductor industry has a lot of equipment that works in a vacuum environment, such as PVD, ETCH, and wafers need to cool down the wafer when the process is running in these equipments. Electrostatic adsorption wafers are the equipment that meets this requirement. It uses the principle of electrostatic adsorption to form static electricity of different polarities on the surface of the chuck and the back of the wafer to produce an adsorption effect, and then flows argon gas in the air groove on the surface of the chuck to achieve the effect of cooling. This is a high-end Equipment, many semiconductor equipment manufacturers have corresponding products. [0003] There are following defects in the cold plate cooling mode: [0004] 1. At present, the surface of ...
Claims
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IPC IPC(8): H01L21/683
CPCH01L21/6831H01L21/6833
Inventor 王蜀豫
Owner 杭州晶通科技有限公司