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FRD diode with short reverse recovery time, and preparation method thereof

A reverse recovery time, diode technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve the problem of large forward voltage drop, no production line pollution, and short reverse recovery time of FRD diodes and other problems, to achieve the effect of reducing forward voltage drop, short reverse recovery time, and increasing current flow area

Active Publication Date: 2021-05-07
杭州中瑞宏芯半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, the existing FRD diodes cannot have the characteristics of short reverse recovery time, no production line pollution and large forward voltage drop at the same time

Method used

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  • FRD diode with short reverse recovery time, and preparation method thereof
  • FRD diode with short reverse recovery time, and preparation method thereof
  • FRD diode with short reverse recovery time, and preparation method thereof

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but not as a basis for limiting the present invention.

[0028] Example. A FRD diode with a short reverse recovery time, constructed as Figure 1-2 As shown, it includes an N-type silicon substrate layer 1, a number of grooves 2 are distributed on the surface of the N-type silicon substrate layer 1, a P+ substrate structure 3 is arranged inside the groove 2, and an N-type silicon substrate structure 3 is arranged outside the N-type silicon substrate layer 1. The epitaxial layer 4 , the inner side of the N-type silicon epitaxial layer 4 completely fills the trench 2 .

[0029] The groove 2 includes a bottom plane 201, and an inclined side wall 202 is arranged around the bottom plane 201. The cross-sectional shape of the side wall 202 is V-shaped, and the slope α of the side wall 202 is 45°.

[0030] The depth H of the bottom plane 201 is 0.5um, and the w...

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Abstract

The invention discloses an FRD diode with short reverse recovery time, and a preparation method thereof. The FRD diode comprises an N-type silicon substrate layer (1), a plurality of grooves (2) are distributed in the surface of the N-type silicon substrate layer (1), P+ substrate structures (3) are arranged on the inner sides of the grooves (2), an N-type silicon epitaxial layer (4) is arranged outside the N-type silicon substrate layer (1), and the grooves (2) are completely filled with the inner side of the N-type silicon epitaxial layer (4). According to the invention, the grooves formed on the surface of the N-type silicon substrate layer are matched with the P+ substrate structure, so that the reverse recovery time and the high-temperature reliability of the FRD can be effectively improved, and pollution to a production line is avoided; and meanwhile, the current density of the FRD diode can be improved due to the arrangement of the grooves, so that the problem that forward conduction voltage drop is increased due to the process is solved on the basis that the performance is improved, and the FRD diode has the advantages of being short in reverse recovery time, free of production line pollution and small in forward conduction voltage drop at the same time.

Description

technical field [0001] The invention relates to a FRD diode, in particular to a FRD diode with a short reverse recovery time and a preparation method. Background technique [0002] The traditional FRD material is to directly grow a layer of N-type epitaxial material on the N-type substrate material to form the raw material for manufacturing FRD, and then form the entire semiconductor device structure through photolithography, etching, implantation and annealing processes. In order to speed up the reverse recovery time of FRD diodes and improve the high temperature stability of FRD diodes, the current FRD diodes will also adopt Pt expansion or electron irradiation process after molding. Among them, the recovery time of the FRD diode after the electron irradiation process is 12-30ns, and the high-temperature reliability reaches 125°C; the FRD diode after the Pt expansion process can achieve a recovery time of 5-20ns, and the high-temperature reliability is 150°C. [0003] How...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/868
CPCH01L29/0603H01L29/868Y02P70/50
Inventor 张振中郝建勇孙军
Owner 杭州中瑞宏芯半导体有限公司
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