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Formation method of semiconductor structure

A semiconductor and body layer technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of unstable performance of fin field effect transistors and increased difficulty in the process of fin field effect transistors.

Pending Publication Date: 2021-05-14
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, as the size of semiconductor devices shrinks and the device density increases, the process difficulty of forming fin field effect transistors increases, resulting in unstable performance of the formed fin field effect transistors

Method used

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Embodiment Construction

[0019] It can be seen from the background art that with the further progress of the process node of the semiconductor technology, it is more difficult to form a Fin Field Effect Transistor (Fin FET). At the 14nm technology node and below, an in-situ water vapor generation (ISSG) process is usually used to generate a gate oxide layer on the surface of the fin. When ISSG is used to generate the gate oxide, the silicon in the fin is consumed, ie, the critical dimension (CD) of the fin is lost. When the CD of the fin is large, it can bear the consumption of silicon. However, at the 14nm technology node and below, since the CD of the fin is already small, bearing the consumption of silicon is not conducive to the performance of the semiconductor structure.

[0020] In order to solve the above problems, the inventor has studied and provided a method for forming a semiconductor structure. Before forming a gate oxide layer on the surface of the fin, a silicon layer is first deposited ...

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Abstract

A formation method of a semiconductor structure comprises the following steps: providing a substrate on which a fin part is formed; forming a silicon layer on the surface of the fin part, wherein the silicon layer covers the top and the side wall of the fin part; and carrying out oxidation treatment on the silicon layer to form a gate oxide layer which covers the top and the side wall of the fin part. According to the formation method of the semiconductor structure provided by the embodiment of the invention, the additional silicon layer is formed on the surface of the fin part, so that the original silicon of the fin part does not need to be consumed too much when the gate oxide layer is formed, the size loss of the fin part is avoided, and the performance of the semiconductor structure is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. As the most basic semiconductor device, the device is being widely used at present. The control ability of the traditional planar device to the channel current is weakened, resulting in the short channel effect and causing the leakage current, which ultimately affects the electrical performance of the semiconductor device. [0003] In order to overcome the short channel effect of the device and suppress the leakage current, the prior art proposes a fin field effect transistor (Fin FET), which is a common multi-gate device, and the structure of the fin field effect transistor includes : the fin and the isolation structure lo...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/336
CPCH01L21/28229H01L29/66795
Inventor 杨鹏飞
Owner SEMICON MFG INT (SHANGHAI) CORP