Graphene piezoresistive factor detection method

Abstract

The invention discloses a graphene piezoresistive factor detection method which is characterized by comprising the following steps of: (1) taking a silicon dioxide / silicon wafer as a bearing substrate of graphene, depositing the graphene on the substrate and manufacturing a Ti / Au detection electrode on the surface of the graphene, and meanwhile, manufacturing a strain gauge structure serving as a reference electrode on the surface of the substrate; (2) adhering the silicon wafer with the detection electrode and the reference electrode to the middle part of the upper end surface of a rectangular beam, and detecting the resistance change of graphene and the resistance change of the reference electrode by using a universal meter; (3) putting the whole device in the step (2) into a box body, and filling the box body with nitrogen; (4) applying a load to the middle part of the lower part of the rectangular beam to enable the beam to generate upward or downward bending deformation, and measuring the resistance changes of the graphene and the reference electrode by using the universal meter; and (5) introducing the related data into the calculation to obtain the graphene piezoresistive factor. When the method is used for measuring the piezoresistive factor, the result is more accurate.

Description

technical field [0001] The invention relates to the technical field of detection, in particular to a graphene piezoresistive factor detection method. Background technique [0002] Graphene is a two-dimensional carbonaceous new material with a honeycomb lattice structure composed of a single layer of carbon atoms distributed in a regular hexagon. This structure is infinitely repeated and periodically distributed in the plane, but vertically There are only nanoscale in the thickness direction of the distribution plane. This single-atom-thick carbon film has an extremely tight and neat structure, almost no defects, can exist stably and exhibit many surprising physical and chemical characteristics, and has important applications in new energy, detection, micro-sensors and other fields value. Detecting the piezoresistive properties of graphene is the basis for the development of piezoresistive graphene micro-nano sensors. [0003] The detection of the piezoresistive factor of ...

AI Technical Summary

Problems solved by technology

As a two-dimensional nanomaterial, the thickness of graphene samples is only about 0.34 nanometers, and half of the length and width do not exceed 10 microns. At the same time, graphene is highly transparent, with a light transmittance as high as 97%, and it is difficult to accurately locate it under normal conditions. Difficult to directly apply strain for resistance detection

In foreign countries, a scanning atomic force microscope is used to measure the piezoresistive factor of graphene deposited on the hole. This method is expensive, the sample production process is long, difficult, and the measurement process is lengthy. It is also difficult to achieve instant detection

Graphene is also deposited on some substrates with high elastic coefficients for tensile measurement, but the measurement of graphene deformation is affected by the elastic substrate

Moreover, none of the above methods can realize the compression deformation of graphene, nor can it realize the detection of the piezoresistive factor in the compression deformation.

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