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Quick activate for memory sensing

A memory and memory unit technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as lost state

Pending Publication Date: 2021-05-18
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Volatile memory devices such as DRAM can lose their stored state when disconnected from external power

Method used

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  • Quick activate for memory sensing
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  • Quick activate for memory sensing

Examples

Experimental program
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Embodiment Construction

[0016] Information can be stored in and read from a memory device using an access command that triggers at the memory device for accessing (e.g., reading or writing) the memory device addressed by the access command. The performance of the memory cell's sequence of operations. In some examples, the sequence of operations (or "access command sequence") used to execute the received access command differs based on the technology used by the memory device. For example, an access command sequence (e.g., an activate (ACT) command sequence) for accessing a ferroelectric memory cell may include additional operations and have more Take command sequences (eg, ACT command sequences) long in duration.

[0017] In some examples, the access commands are also used to implement a test procedure for the memory device. That is, the test program may apply a series of voltages to specific components of the memory device in a specific order by providing the memory device with a specific series o...

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Abstract

The invention provides quick activate for memory sensing. An operating mode that is associated with a command sequence having a reduced duration relative to another operating mode may be configured at a memory device. The operating mode may be configured based on determining that a testing procedure does not attempt to preserve or is independent of preserving a logic state of accessed memory cells, among other conditions. While operating in the mode, the memory device may perform a received activate command using a first set of operations having a first duration-rather than a second set of operations having a second set of operations having a second, longer duration-to perform the received activate command. The first set of operations may also use less current or introduce less disturbance into the memory device relative to the second set of operations.

Description

[0001] cross reference [0002] This patent application claims priority to Majerus' U.S. Patent Application Serial No. 16 / 686,071, entitled "QUICK ACTIVATEFOR MEMORY SENSING," filed November 15, 2019 , said US patent application is assigned to the assignee of the present application and is expressly incorporated herein by reference in its entirety. technical field [0003] The technical field relates to fast activation for memory sensing. Background technique [0004] The following generally relates to a system including at least one memory device, and more specifically to executing a fast activate command sequence. [0005] Memory devices are widely used to store information in various electronic devices such as computers, wireless communication devices, cameras, digital displays, and the like. Information is stored by programming different states of the memory device. For example, binary devices most often store one of two states typically represented by a logical one ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/408G11C29/50
CPCG11C11/4085G11C29/50004G11C11/221G11C11/2273G11C7/222G11C11/1693G11C11/2257G11C7/02G11C7/08G11C29/14G06F3/0688G06F3/0634G06F3/061G11C29/48G06F3/0659G06F3/0673
Inventor K·T·马耶鲁斯
Owner MICRON TECH INC