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Semiconductor gas sensor as well as preparation method and application thereof

A gas sensor and semiconductor technology, applied in instruments, scientific instruments, measuring devices, etc., can solve problems such as poor chemical stability, and achieve the effects of stable sensitivity, easy mass production, and improved sensitivity

Active Publication Date: 2021-05-25
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Make up for the shortcomings of poor chemical stability of traditional silicon-based semiconductor sensors

Method used

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  • Semiconductor gas sensor as well as preparation method and application thereof
  • Semiconductor gas sensor as well as preparation method and application thereof
  • Semiconductor gas sensor as well as preparation method and application thereof

Examples

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preparation example Construction

[0031] The embodiment of the present invention also provides a method for preparing the semiconductor gas sensor, including the steps of making a heterojunction and making a first electrode and a second electrode that cooperate with the heterojunction; the preparation method further includes: A plurality of deep energy level sites are set on the surface of the heterojunction.

[0032] Further, the preparation method specifically includes: introducing deep energy level sites on the surface of the heterojunction by at least any one of plasma treatment, ion implantation, ion diffusion, and epitaxial growth.

[0033] The embodiment of the present invention also provides a method for gas detection, including:

[0034] Provide the semiconductor gas sensor;

[0035] The selected gas molecules are fully contacted with the deep energy level sites on the surface of the heterojunction, and the detection of the selected gas molecules is realized by detecting the channel current change of...

Embodiment 1

[0050] see figure 1 , a semiconductor gas sensor provided by an embodiment of the present invention, comprising a sapphire substrate, an Al disposed on the sapphire substrate 0.26 Ga 0.74 N / GaN heterojunction and with the Al 0.26 Ga 0.74 A first electrode and a second electrode matched to the N / GaN heterojunction, the first electrode and the second electrode form an ohmic contact with the heterojunction and pass through the Al 0.26 Ga 0.74 Two-dimensional electron gas-electric connection in N / GaN heterojunction, where the Al 0.26 Ga 0.74 The surface layer of the N / GaN heterojunction is distributed with multiple deep energy level sites (the deep energy level sites are formed by introducing deep energy level impurities), and the energy levels of the deep energy level sites are related to the selected gas molecules. There is enough energy level difference in the LUMO or HOMO energy level of , so that when the selected gas molecule is fully contacted with the deep energy lev...

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Abstract

The invention discloses a semiconductor gas sensor as well as a preparation method and application thereof. The semiconductor gas sensor comprises a heterojunction, a first electrode and a second electrode, the first electrode and the second electrode are matched with the heterojunction, two-dimensional electron gas or two-dimensional hole gas is formed in the heterojunction, and the first electrode and the second electrode are electrically connected through the two-dimensional electron gas or the two-dimensional hole gas; a plurality of deep energy level sites are distributed on the surface of the heterojunction, and an enough energy level difference exists between the energy level of the deep energy level sites and the LUMO or HOMO energy level of selected gas molecules, so that when the selected gas molecules are in full contact with the deep energy level sites, electron or hole transfer can occur between the selected gas molecules and the deep energy level site, so that the channel current of the semiconductor gas sensor is changed. The semiconductor gas sensor provided by the embodiment of the invention is stable in chemical property, long in service life and applicable to extreme environments.

Description

technical field [0001] The invention relates to a semiconductor gas sensor, in particular to a semiconductor gas sensor and its preparation method and application, belonging to the field of semiconductor technology. Background technique [0002] At present, the third-generation semiconductor materials, represented by silicon carbide and gallium nitride, have superior performances such as high frequency, high power, high voltage resistance, high temperature resistance, and strong radiation resistance. They are supporting the new generation of mobile communications, new energy vehicles, Key electronic components for high-speed rail trains, displays, etc. There are still many applications of third-generation semiconductor materials in research and development based on the advantages of ALGaN / GaN heterojunction HEMT devices such as high voltage resistance, high temperature resistance, and strong stability, which can be used to prepare a high chemical stability, high sensitivity ...

Claims

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Application Information

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IPC IPC(8): G01N27/12
CPCG01N27/129
Inventor 马颖陈亮陈财蔡勇
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI