Supercharge Your Innovation With Domain-Expert AI Agents!

A chip structure and its manufacturing method

A technology of chip structure and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve problems such as unfavorable pad reliability and achieve the effect of protecting electrode pads

Active Publication Date: 2022-06-07
山东睿芯半导体科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the process of chip transportation, wire bonding, packaging, etc., the pads need to experience heat, water vapor, etc., which is not conducive to the reliability of the pads.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A chip structure and its manufacturing method
  • A chip structure and its manufacturing method
  • A chip structure and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The present technology will be described with reference to the accompanying drawings in the embodiments. The present technology relates to a chip structure including at least a sacrificial electrode and an electrode pad, and the two are weakly electrically connected through a seed layer, and the two have specific redox characteristics. potential.

[0035] It will be appreciated that the present technology may be implemented in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the technology to those skilled in the art. Indeed, this technology is intended to cover alternatives, modifications, and equivalents of these embodiments, which are included within the scope and spirit of the technology as defined by the appended claims. Furthermore, in the following detailed description of the present technology, numer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a chip structure and a manufacturing method thereof. The chip structure of the present invention protects its electrode pad for external electrical connection by forming an exposed sacrificial electrode on its side, which makes the redox potential of the material of the electrode pad higher than that of the material of the sacrificial electrode, which can In the environment of water and oxygen, the sacrificial electrode material is first consumed to protect the electrode pad material. Moreover, the sacrificial electrodes are weakly electrically connected to the electrode pads one by one through the seed layer, so as to ensure that the initial potentials of the sacrificial electrodes and the electrode pads are the same, which can further protect the electrode pads.

Description

technical field [0001] The invention relates to the field of chip structure packaging and manufacturing, in particular to a chip structure and a manufacturing method thereof. Background technique [0002] The chip structure often includes a semiconductor bare chip with a specific function, and a wiring structure and a pad structure formed by a subsequent process. The final chip needs to expose the pads for electrical connection and integrated packaging. In the process of chip transportation, wire bonding, packaging, etc., the pads need to be eroded by heat, water vapor, etc., which is not conducive to the reliability of the pads. SUMMARY OF THE INVENTION [0003] Based on solving the above problems, the present invention provides a method for manufacturing a chip structure, which includes the following steps: [0004] (1) providing a wafer, the wafer includes a substrate and a plurality of chip active regions in the substrate and a plurality of pads on the plurality of ch...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/50H01L21/60H01L23/488
CPCH01L21/50H01L24/03H01L24/05H01L24/94H01L2224/03H01L2224/0401H01L2224/05H01L2224/05147H01L2224/05116H01L2224/05184H01L2224/18H01L2224/96
Inventor 孙德瑞
Owner 山东睿芯半导体科技有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com