gan device and preparation method

Abstract

The invention provides a GaN device and a preparation method thereof. The preparation includes: providing a semiconductor substrate, preparing a GaN channel layer, and preparing a potential barrier layer, wherein the potential barrier layer includes at least one layer of Al x Ga 1‑x N layer, multilayer Al x Ga 1‑x In the N layer, the Al composition corresponding to each material layer from bottom to top gradually increases, the barrier layer is etched to form the first groove and the second groove, the source ohmic electrode and the drain ohmic electrode are prepared, and the gate is prepared. Cap structure and field plate. The present invention can improve the withstand voltage of the device based on the formed second groove, and at the same time reduce the parasitic capacitance, thereby improving the frequency performance of the device. In addition, the present invention can improve the linearity of the device through the design of the potential barrier layer and the auxiliary structure of the potential barrier, so that the reliability of the device can be improved, and the comprehensive performance of the device can be improved. It can also effectively control the threshold voltage of the device and form better source and drain ohmic contacts.

Description

technical field [0001] The invention belongs to the technical field of GaN device preparation, in particular to a GaN device and a preparation method. Background technique [0002] As a third-generation semiconductor material, GaN has the characteristics of high withstand voltage. In order to further improve the withstand voltage of the device, field plate technology is usually used, that is, adding a field plate at the gate-drain end, so as to alleviate the electric field peak value of the gate-drain end, thereby improving. Pressure resistant. However, the field plate is usually fabricated on a dielectric material, so it will introduce a certain parasitic capacitance, thereby weakening the frequency characteristics of the device. Therefore, it is necessary to provide a GaN device and a preparation method thereof to solve the problem that it is difficult to effectively improve the withstand voltage of the device. SUMMARY OF THE INVENTION [0003] In view of the above-men...

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Problems solved by technology

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a GaN device and a preparation method for solving the problems in the prior art that it is difficult to effectively improve the withstand voltage of GaN devices.

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