Metal organic compound chemical vapor deposition equipment chamber cover and its isolation baffle

Abstract

The disclosure provides a metal organic compound chemical vapor deposition equipment chamber cover and its isolation baffle, belonging to the field of metal organic compound chemical vapor deposition equipment. The isolation baffle includes: an annular plate body, a coolant channel is provided inside the annular plate body, a liquid inlet and a liquid outlet are provided on the surface of the annular plate body, and the liquid inlet and the liquid outlet communicate with the cooling liquid channels respectively, the liquid inlet, the liquid outlet and an end surface of the inner hole of the annular plate body are located on the same plane, and the connection line between the liquid inlet and the liquid outlet Coinciding with the diameter of the inner ring of the annular plate body, several cantilevers are arranged on the outer wall of the inner ring of the annular plate body, and the several cantilever arms are distributed around the center of the annular plate body. The disclosure can improve the flow field near the inner wall of the cavity under the high-speed rotating state of the graphite disk.

Description

technical field [0001] The present disclosure relates to the field of chemical vapor deposition equipment for metal organic compounds, in particular to a chamber cover and an isolation baffle for chemical vapor deposition equipment for metal organic compounds. Background technique [0002] The manufacture of LED (Light Emitting Diode, light-emitting diode) can be divided into two manufacturing links of epitaxy and chip. The epitaxial manufacturing process is mainly to grow epitaxial thin film layers in the reaction chamber of MOCVD (Metal-organic Chemical Vapor Deposition, metal-organic compound chemical vapor deposition) equipment. The basic principle of MOCVD equipment is that the gaseous metal organic matter is diluted by the carrier gas and brought into the reaction chamber of high temperature and high pressure. A graphite disk is installed in the reaction chamber, and a substrate is placed on the graphite disk. The gaseous metal organic matter reacts on the surface of t...

AI Technical Summary

Problems solved by technology

When the airflow reaches the rotating high-temperature graphite disk, thermal convection begins to dominate in this state, the flow field becomes unstable and MO source mixing occurs, and at this time the center of the graphite disk is more likely to form a vortex (the airflow rotates around the axis of the graphite disk); at the same time, due to The high-speed rotation of the graphite disk in the reaction chamber will drive the airflow field in the chamber to do high-speed circular motion together. With the effect of centripetal force and viscous resistance of the graphite disk, the mixed gas on the surface of the graphite disk will be thrown to the side of the chamber at high speed along the radial direction. wall, resulting in the accumulation of MO sources near the inner wall of the cavity, and serious by-products are easily attached to individual positions on the inner wall of the cavity, and these by-products react on the flow field, which will further aggravate this accumulation

[0004] In addition, when the rotation speed of the graphite disk increases, the linear velocity of the edge flow field also increases, and the velocity gradient difference of the air flow at the boundary layer on the inner wall of the cavity is enlarged, and the laminar flow state cannot be maintained and will gradually become unstable. prone to reflux

The existence of backflow will have a negative effect on the concentration gradient of the MO source around the cavity, affecting the adsorption and desorption of the precursor species there, and further affecting its growth on the substrate.

[0005] Finally, the flow field affects the crystal quality and uniformity of the substrate epitaxial thin film layer at the edge of the graphite disk

Images