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Manufacturing method of memory device

A manufacturing method and storage device technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems that the yield rate of storage devices needs to be improved, and achieve the effects of excellent collapse resistance, quality improvement, and performance improvement

Active Publication Date: 2022-04-26
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The manufacturing yield of existing storage devices still needs to be improved

Method used

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  • Manufacturing method of memory device
  • Manufacturing method of memory device
  • Manufacturing method of memory device

Examples

Experimental program
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Embodiment Construction

[0025] It can be seen from the background art that the product yield of existing memory devices still needs to be improved. figure 1 and figure 2 It is a structural schematic diagram corresponding to each step of a manufacturing method of a storage device, combined with figure 1 and figure 2 , and analyze the manufacturing method of the memory device:

[0026] refer to figure 1 , providing a base 101 and a protruding portion 102 on the base 101 , and adjacent protruding portions 102 and the base 101 form a groove 104 .

[0027] The process steps of forming the protruding portion 102 generally include a dry etching step and a step of removing the mask layer, resulting in impurities 103 on the surface of the trench 104 .

[0028] refer to figure 2 , using wet cleaning treatment to remove impurities 103 .

[0029] The wet cleaning process includes: in the groove 104 (reference figure 1 ) into the cleaning solution 105 for absorbing or dissolving the impurities 103; dryi...

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Abstract

The invention discloses a method for manufacturing a storage device, comprising: providing a base and a plurality of discrete first protrusions on the base, wherein adjacent first protrusions and the base form a first groove; The groove is subjected to wet cleaning treatment; after the wet cleaning treatment, oxidation treatment is performed on the first raised portion exposed on the side wall of the first groove, so that part of the first raised portion is converted into an oxide layer, and the first raised portion remains The portion is used as a second raised portion, and the aspect ratio of the second raised portion is greater than that of the first raised portion; the oxide layer is removed. The invention can improve the product yield of the storage device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a storage device. Background technique [0002] A storage device is a device for storing programs or various data. There are various types of storage devices, including Static Random-Access Memory (SRAM), Programmable Read-Only Memory (Programmable Read-Only Memory, PROM), and Dynamic Random-Access Memory (Dynamic Random-Access Memory, DRAM). The manufacturing yield of existing storage devices still needs to be improved. Contents of the invention [0003] The object of the present invention is to provide a method for manufacturing a storage device, which improves the product yield of the storage device. [0004] In order to solve the above technical problems, an embodiment of the present invention provides a method for manufacturing a storage device, including: [0005] Provide a base and a plurality of discrete first protrusions on the b...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/3065H01L21/308H01L21/311H01L21/762
CPCH01L21/0206H01L21/0223H01L21/31116H01L21/3065H01L21/308H01L21/76224
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC