Unlock instant, AI-driven research and patent intelligence for your innovation.

Shallow trench isolation method

A shallow trench, insulating film technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of complex process and reduce isolation reliability, and achieve the effect of ensuring isolation reliability.

Inactive Publication Date: 2003-11-26
SAMSUNG ELECTRONICS CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is necessary to perform plasma treatment on the oxide film in order to eliminate this dependence on the oxide film, so that the process becomes complicated
[0023] Therefore, it will reduce the isolation reliability between parts when the process margin is not enough

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Shallow trench isolation method
  • Shallow trench isolation method
  • Shallow trench isolation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The invention will be described more fully hereinafter with reference to the accompanying drawings, which show preferred embodiments of the invention. This invention may, however, be embodied in many different forms and is not limited to the embodiments set forth herein; these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0035] see Figure 2A , depositing multiple layers of insulating films on a semiconductor substrate 31, such as a single crystal silicon substrate. More specifically, on the semiconductor substrate 31, a pad oxide film 33 with a thickness of 100 Å and a nitride film 35 with a thickness of 2000 Å, ie, a chemical-mechanical polishing treatment stopper film, are sequentially deposited. Then, a high temperature oxide film 37 having a predetermined thickness is deposited on the nitride film 35 to serve as a trench etch mask.

[0036] Next, usi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A shallow trench isolation method forms an initial shallow trench which is less deep than a final shallow trench in a field area of a semiconductor substrate. An insulator film is deposited onto the semiconductor substrate so that the initial shallow trench can be completely filled. Then, active area of semiconductor substrate is exposed, and the insulator film in the initial shallow trench is left to a thickness corresponding to a depth of the final shallow trench. Then, an epitaxial layer is grown in the exposed active area. A shallow trench having a high aspect ratio can be completely filled with insulator film, to thereby ensure reliability for shallow trench isolation process.

Description

technical field [0001] The present invention relates to the shallow trench isolation method of semiconductor device, relate in particular to such a kind of shallow trench isolation method, wherein the shallow trench with high aspect ratio is filled with insulating film and does not need complex process, thereby make a part and adjacent Partial isolation. Background technique [0002] In general, as is well known, the size of the insulator region is an absolutely important factor for determining the size of a memory cell in a highly integrated memory device. Therefore, techniques related to reducing the size of the insulator region have been greatly developed. [0003] The prior art generally adopts local oxidation of silicon (LOCOS), selective polysilicon oxidation (SEPOX), recessed polysilicon spacer (RPSL) LOCOS, and the like. The LOCOS method is most widely used because it has some advantages, such as simple structure and process, and improved integration, in terms of i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/76H01L21/762
CPCH01L21/76224H01L21/76
Inventor 讲佑铎
Owner SAMSUNG ELECTRONICS CO LTD