Unlock instant, AI-driven research and patent intelligence for your innovation.

Interface state analysis method and device of mis-hemt device

An analysis method and interface state technology, which is applied in the direction of measuring devices, semiconductor devices, single semiconductor device testing, etc., can solve the problems that the accuracy of the results is difficult to guarantee, and achieve the effect of high accuracy

Active Publication Date: 2022-05-31
PEKING UNIV SHENZHEN GRADUATE SCHOOL
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method does not perform steps such as simulation and fitting, so it cannot provide a proof to prove that its theory and formula for calculating the interface state density are correct and effective, so the accuracy of its results is difficult to guarantee

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Interface state analysis method and device of mis-hemt device
  • Interface state analysis method and device of mis-hemt device
  • Interface state analysis method and device of mis-hemt device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Step S201, establish the equivalent model of the MIS-HEMT device to be analyzed.

[0044] Referring to FIG. 3, the MIS-HEMT device includes a dielectric layer 301, a barrier layer 302 and a channel layer 303. Need to explain

[0046] In some embodiments, the equivalent model may also introduce more levels of equivalent circuits, such as ohmic contacts

[0048] In some embodiments, the dielectric layer equivalent circuit A may further include a resistive element connected in parallel with the resistive element.

[0052] In some embodiments, the resistive element described above may be a capacitor, and the resistive element may be a resistor.

[0062] Step S204, draw a function curve.

[0063] The step of drawing the function curve can be performed by comparing the equivalent resistive element of the barrier layer, the equivalent resistive element of the channel layer,

Embodiment 2

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An interface state analysis method and device of a MIS-HEMT device, the method establishes an equivalent model of the MIS-HEMT device, the equivalent model includes an equivalent circuit for representing a dielectric layer, a barrier layer and a channel layer, through A group of capacitance-frequency function curves and conductance-frequency function curves that can best fit the measured capacitance-frequency scatter diagram and the measured conductance-frequency scatter diagram can be drawn by using this equivalent model, and this group is used as Fitting group function curves; calculate the interface state parameters of the MIS-HEMT device according to a group of assignments corresponding to the fitting group frequency function curves, because the fitting group frequency function curves fitted by the equivalent model can be fitted simultaneously Combined with the measured capacitance-frequency scatter diagram and the measured conductance-frequency scatter diagram, the analyzed interface state parameters have higher accuracy.

Description

Interface state analysis method and device for MIS‑HEMT devices technical field The present invention relates to semiconductor field, be specifically related to a kind of interface state analysis method and device of MIS-HEMT device. Background technique [0002] Gallium nitride (GaN) material is a wide bandgap semiconductor material, which is the first generation semiconductor following silicon and gallium arsenide as the New semiconductor materials developed rapidly after the second generation of semiconductor materials. Due to the large forbidden band width of GaN materials, the breakdown It has the advantages of high electric field, high saturation electron velocity, high thermal conductivity, low dielectric constant, stable chemical properties and strong radiation resistance. In recent years, it has been widely used, especially GaN-based MIS-HEMT devices, GaN-based MIS-HEMT devices have HEMT devices At the same time, the gate leakage current can be better suppres...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26G01R27/26H01L21/66
CPCH01L29/2003H01L29/7786H01L29/41766G01R31/2621G01R27/2605
Inventor 林信南熊树豪
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL