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Backside illuminated image sensor and manufacturing method thereof

A technology of an image sensor and a manufacturing method, which is applied to semiconductor devices, electric solid-state devices, radiation control devices, etc., can solve problems such as large warpage of devices, and achieve the effect of reducing warpage of wafers

Inactive Publication Date: 2021-06-18
HUA HONG SEMICON WUXI LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The application provides a back-illuminated image sensor and its manufacturing method, which can solve the problem of large device warping in the related art

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  • Backside illuminated image sensor and manufacturing method thereof
  • Backside illuminated image sensor and manufacturing method thereof
  • Backside illuminated image sensor and manufacturing method thereof

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Embodiment Construction

[0044] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0045] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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Abstract

The invention relates to the field of CMOS image sensors, in particular to a backside illuminated image sensor and a manufacturing method thereof. The method comprises the following steps: providing a base layer including opposing first and second surfaces; forming nitride layers on the first surface and the second surface of the substrate layer; selectively etching the photosensitive region of the substrate layer, and forming a plurality of deep grooves extending from the first surface to the second surface in the photosensitive region of the substrate layer; depositing an insulating dielectric layer, so that the insulating dielectric layer fills the deep trench and covers the photosensitive region; forming an LTO layer on the insulating dielectric layer and the second surface nitride layer; grinding the insulating dielectric layer to expose the nitride layer on the first surface; etching and adjusting the height of the insulating dielectric layer in the deep groove; and removing the nitride layer on the first surface. The backside illuminated image sensor is manufactured by the method. According to the technical scheme provided by the invention, the problem of relatively large warping of the device in related technologies can be solved.

Description

technical field [0001] The present application relates to the field of CMOS image sensors, in particular to a back-illuminated image sensor and a manufacturing method thereof. Background technique [0002] Due to the rapid development of CMOS technology and technology, CIS (CMOS Image Sensor, Complementary Metal Oxide Semiconductor Image Sensor) chips, that is, CMOS image sensors have been widely used. The CIS chip includes a number of photodiodes arranged in an array, and the photoelectric conversion is mainly realized through the photodiodes. [0003] For front-illuminated image sensors, light enters from the metal wiring layer on the front, and then focuses on the diodes in the photosensitive area. As the size of the CMOS image sensor module of small devices such as mobile phones gradually shrinks, the size of the photosensitive area is also adaptively reduced, so that the amount of light entering the photosensitive area is much smaller than that of traditional cameras, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1463H01L27/1464H01L27/14685H01L27/14687
Inventor 邱元元郭振强范晓
Owner HUA HONG SEMICON WUXI LTD