Chemical mechanical polishing solution
A chemical mechanical and polishing fluid technology, which is applied in the fields of polishing compositions containing abrasives, electrical components, semiconductor/solid-state devices, etc., can solve problems such as butterfly shape, achieve low effect, high polishing rate, and reduce butterfly shape volume effect
Pending Publication Date: 2021-06-22
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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[0004] In order to solve the butterfly problem of the negatively charged cerium oxide treated with acrylic acid in the prior art because of excessive polishing, the present invention provides a chemical mechanical polishing solution comprising cerium oxide, polyacrylic acid, polyvinylamine, and water
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[0022] Preparation method: In this example, the reference example contains 0.4wt% cerium oxide, and the content of acrylic acid is 900ppm. In other examples and comparative examples, polyvinylamines of different molecular weights and contents are added on the basis of the reference example, and ammonia water (NH 4 OH) or nitric acid (HNO 3 ) to adjust the pH to 4.5, and make up the mass percentage to 100% with water. See Table 1 for detailed components.
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The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises cerium oxide, polyacrylic acid, polyvinylamine and water. According to the invention, the polyvinylamine is used as an additive, so that the butterfly-shaped amount of the cerium oxide with negative charges on the pattern wafer can be reduced, and the planarization efficiency is improved.
Description
technical field [0001] The invention relates to the field of chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid. Background technique [0002] At present, chemical mechanical polishing (CMP) has become the most effective and mature planarization technology in the manufacturing process of micro-nano devices. In the manufacturing process of micro-nano devices, the shallow trench isolation (Shallow Trench Isolation, STI) process has become the mainstream isolation technology in recent years due to its outstanding isolation performance, flat surface morphology and good locking performance. [0003] In the shallow groove isolation polishing process, the polishing liquid generally has a high selectivity ratio to the polishing speed of silicon oxide and silicon nitride. When the silicon nitride layer is exposed, silicon nitride acts as a barrier layer to allow polishing under ideal conditions. stop. If the silicon oxide layer is over-polis...
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IPC IPC(8): C09G1/02
CPCC09G1/02H01L21/304
Inventor 任晓明贾长征李守田
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD