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Growth device for preparing silicon carbide single crystals by adopting PVT method

A silicon carbide single crystal and growth device technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of limited flexibility, inaccurate temperature control, unfavorable large-size high-quality crystal growth, etc., to achieve Large adjustment range, the effect of promoting growth

Pending Publication Date: 2021-07-13
NINGBO HIPER VACUUM TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For the growth device of the prior art, the heating method mostly adopts single-coil medium-frequency induction heating. During the crystal growth process, the induction coil controls the temperature by adjusting the power of the coil and the relative position between the coil and the crucible, so that the silicon carbide source material in the crucible Appropriate temperature gradients are generated at the center and the seed crystal, so that the crystal can continue to grow. The flexibility of the temperature adjustment of the induction coil heating is very limited. When the induction coil moves axially, on the one hand, the axial temperature can be adjusted, and at the same time, the radial The temperature gradient will also change accordingly. The induction coil has a certain linkage when adjusting the temperature. The temperature control during the growth is not accurate enough, which will affect the growth quality and growth speed of the crystal, which is not conducive to the growth of large-size high-quality crystals. , and graphite heating can solve this problem

Method used

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  • Growth device for preparing silicon carbide single crystals by adopting PVT method
  • Growth device for preparing silicon carbide single crystals by adopting PVT method
  • Growth device for preparing silicon carbide single crystals by adopting PVT method

Examples

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Effect test

Embodiment 1

[0029] Such as figure 1 As shown, this embodiment provides a growth device for preparing silicon carbide single crystal by PVT method, including a sealed cavity 7, a heating structure 3, a heat preservation structure 6 and a temperature measuring mechanism; the heat preservation structure 6 is arranged in the sealed cavity 7 Inside; the heating structure 3 is set in the heat preservation structure 6, the temperature measuring mechanism is set on the sealed cavity 7; the crucible 5 is set in the heat preservation structure 6, and the seed crystal holder 4 is set in the crucible within 5;

[0030] The sealed cavity is a double-jacketed water-cooled structure.

[0031] The heating structure 3 includes an upper heating area 31, a lower heating area 33 and a middle heating area 32; the upper heating area 31, the lower heating area 33 and the middle heating area 32 operate independently; the upper heating area 31 It is arranged at the upper part of the heat preservation structure ...

Embodiment 2

[0039] This embodiment is an embodiment improved on the basis of the first embodiment.

[0040] Such as Figure 5 and Figure 6 As shown, the rotating mechanism 8 is used to drive the rotation of the crucible 5, the lifting mechanism 10 is used to drive the lifting of the crucible 5, and the rotating shaft and the sealing chamber are sealed with bellows.

[0041] In a more specific embodiment, the rotating mechanism 8 is arranged on the bottom or top of the crucible 5 ( Figure 5 or Figure 6 ). The rotating mechanism 8 can include a rotating motor and a transmission mechanism. The rotating motor is connected with the crucible 5 through the transmission mechanism to drive the crucible 5 to rotate;

[0042] The lifting mechanism 10 includes a lead screw and a transmission mechanism, and drives the crucible 5 to move up and down in the vertical direction, and can adopt a motion module or other methods.

[0043] The transmission mechanism is conventional technology, and the ...

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Abstract

The invention discloses a growth device for preparing silicon carbide single crystals by adopting a PVT method, which relates to the technical field of silicon carbide single crystal preparation and crystal growth. The growth device comprises a sealing cavity, a heating structure, a heat preservation structure, a temperature measuring mechanism, a rotating mechanism and a lifting mechanism, wherein the heat preservation structure is arranged in the sealing cavity; the heating structure is arranged in the heat preservation structure, and the temperature measuring mechanism is arranged on the sealing cavity; the crucible is arranged in the heat preservation structure, and the seed crystal support is arranged in the crucible; the rotating mechanism is used for driving the crucible to rotate, the lifting mechanism is used for driving the crucible to ascend and descend, or the rotating mechanism is used for driving the seed crystal support to rotate, and the lifting mechanism is used for driving the seed crystal support to ascend and descend. The bottom, the periphery and the top of the crucible can be respectively heated by the heating structure, and the radial temperature gradient and the axial temperature gradient can be adjusted by adjusting the power of a single heating resistor, so that the radial temperature gradient and the axial temperature gradient around the crucible are in the most appropriate state, and the growth of crystals can be better promoted.

Description

technical field [0001] The invention relates to the technical field of silicon carbide single crystal preparation and crystal growth, in particular to a growth device for preparing silicon carbide single crystal by using a PVT method. Background technique [0002] Silicon carbide is a high-quality wide-bandgap semiconductor material, which has the advantages of wide bandgap, high breakdown electric field, high thermal conductivity, high saturation electron drift rate, etc., and can meet the needs of high temperature, high power, low loss and large diameter devices. Silicon carbide single crystals cannot be formed by the melting method, and the sublimation growth technology based on the improved Lely method - physical vapor transport method is a common method to obtain silicon carbide single crystals. The growth principle of silicon carbide single crystal prepared by PVT method is: high-purity silicon carbide powder source decomposes at high temperature to form gaseous substa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B29/36C30B23/00C30B23/002
Inventor 刘鹏徐文立潘建栋袁晓芸
Owner NINGBO HIPER VACUUM TECH CO LTD