Array substrate and preparation method thereof
A technology for an array substrate and a base substrate, which is applied in the field of array substrates and their preparation, can solve the problems of high production cost and complicated process, and achieve the effect of saving production cost.
Active Publication Date: 2021-07-13
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
[0004]
The embodiment of the present invention provides an array substrate, which is used to solve the technical problem that the hybrid TFT structure of the display device in the prior art needs to add multiple photomasks during the preparation, the manufacturing process is complicated, and the production cost is too high.
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[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. In the drawings, for clarity and ease of understanding and description, the size and thickness of the components shown in the drawings are not in scale.
[0031] Such as figure 1 As shown, it is a schematic diagram of the basic structure of the array substrate provided by the embodiment of the present invention. The array substrate includes a display area A1 and a non-display area A2, and also includes a metal oxide thin film transistor 10 located in the display area A1 and a metal oxide thin film transistor located in the The low temperature polysilicon thin film transistor 20 in the non-display area A2; wherein, the metal oxide thin film transistor 10 and the low temperature polysilicon thin film transistor 20 both have a bottom gate structure, and the gate 101 of the metal ox...
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The invention provides an array substrate and a preparation method thereof. The array substrate comprises a metal oxide thin film transistor located in a display area and a low-temperature polycrystalline silicon thin film transistor located in a non-display area. The metal oxide thin film transistor and the low-temperature polycrystalline silicon thin film transistor are both bottom gate structures, the gate electrode of the metal oxide thin film transistor and the gate electrode of the low-temperature polycrystalline silicon thin film transistor are arranged on a same layer, and a source and drain metal layer of the metal oxide thin film transistor and a source and drain metal layer of the low-temperature polycrystalline silicon thin film transistor are arranged on the same layer. The gate electrode of the metal oxide thin film transistor and the gate electrode of the low-temperature polycrystalline silicon thin film transistor are arranged on the same layer, and the source and drain electrode metal layer of the metal oxide thin film transistor and the source and drain electrode metal layer of the low-temperature polycrystalline silicon thin film transistor are arranged on the same layer, so that the total number of photomasks required for preparing a mixed TFT structure can be reduced to 8, and the production cost is greatly saved.
Description
technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate and a preparation method thereof. Background technique [0002] With the development of display technology, liquid crystal displays (Liquid Crystal Display, LCD) and other flat display devices are widely used in mobile phones, televisions, personal digital Various consumer electronic products such as assistants, digital cameras, notebook computers, and desktop computers have become the mainstream of display devices. A thin film transistor (Thin Film Transistor, TFT) is a main driving element in an LCD display device, and is directly related to the development direction of a high-performance flat panel display device. TFTs used in display devices need to consider various factors such as uniformity, leakage current, effective driving length, area efficiency, and hysteresis. [0003] According to different active layer materials, TFTs are classified int...
Claims
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IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/1244H01L27/1248H01L27/1259H01L27/1251
Inventor 罗成志
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD