A Novel Microstructure of Pin Tube

Abstract

The invention discloses a novel microstructure of a PIN tube, which is characterized in that it comprises a Metal 1 layer, a Metal 2 layer, an anode lead-out layer AC, a cathode lead-out layer CC and a PIN tube; the anode lead-out layer AC and the cathode lead-out layer CC are arranged on the On the two poles of the PIN tube, and the Metal 1 layer is above the anode extraction layer AC and the cathode extraction layer CC, and the Metal 2 layer is above the Metal 1 layer; wherein, between the Metal 1 layer and the anode extraction layer AC or the cathode extraction layer CC Via 1, a via hole Via 2 is arranged between the Metal 1 layer and the Metal 2 layer; the present invention provides a novel PIN tube microstructure with simple and reasonable structure and enhanced breakdown voltage and overcurrent capability of the PIN tube.

Description

technical field [0001] The present invention relates to the field of PIN tubes, and more particularly, to a novel microstructure of PIN tubes. Background technique [0002] Millimeter-wave switches and limiters are important components in RF front-end control circuits. Their main functions are channel switching, signal modulation, waveform transformation, and overvoltage protection. They are widely used in high-speed broadband communications, security inspection fine imaging, and space detection. important areas. With the further requirements of the imaging system in terms of miniaturization and high performance, its core circuits and modules are usually required to have the characteristics of high integration, high isolation, strong voltage resistance, and high operating frequency. The types of diodes currently used in switch and limiter circuits mainly include PHEMT tubes and PIN diodes. The PIN switch has small insertion loss, high isolation, and high power withstand. ...

AI Technical Summary

Problems solved by technology

[0003] In the traditional PIN microstructure, the cathode and the anode are drawn out through direct ohmic contact and then connected to Metal 2 (upper layer metal) through a via hole, which results in the part of the ohmic contact layer in contact with the substrate, which cannot be directly in contact with Metal 2. The part is relatively thin, the resistivity is large, the overcurrent capability is poor, and the power resistance performance is low

The X-axis distance between the traditional cathode and anode ohmic contact layer is about (4~7um), which causes the substrate to bear a certain overcurrent capability, which is easy to break down under high power conditions

In the traditional PIN structure, only the metal layer of the cathode and the anode adopts an arc structure at the part where the substrate is in contact. In this way, there will be sharp discharge at the square contact point, charge accumulation, and poor withstand voltage performance.

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