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Solar cell and preparation method thereof

A solar cell and battery technology, applied in the field of solar cells, can solve the problems of photovoltaic cell cutting loss, conversion efficiency downshift, etc., and achieve the effect of reducing mismatch and improving efficiency

Pending Publication Date: 2021-07-16
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The main technology used at this stage is to cut the prepared heterojunction cells into half-piece or smaller cells by laser, but the existing problem is that the cutting loss caused by edge recombination is introduced to the photovoltaic cells at the same time. The conversion efficiency after cutting is seriously downshifted

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] This embodiment provides a method for preparing a solar cell, which specifically includes the following steps:

[0066] (1) A single crystal N-type silicon wafer with a resistivity of 5Ω·cm and a thickness of 150 μm is used for texturing, rough polishing with KOH, texturing with KOH and texturing additives, and finally cleaning by RCA cleaning, and the surface is formed Pyramid suede to obtain a textured silicon wafer, the surface reflectivity of the textured silicon wafer of the silicon wafer is 12.5%;

[0067] (2) Plasma chemical vapor deposition is used to deposit a layer of intrinsic amorphous silicon layer on both sides of the textured silicon wafer, and the process gas is H 2 and SiH 4 , the volume flow ratio is 95:1, and the power density is 65mW / cm 2 , the thickness of the intrinsic amorphous silicon layer on one side is 10nm; a 20nm thick N-type doped amorphous silicon film layer is deposited on the surface of the intrinsic amorphous silicon layer on one side...

Embodiment 2

[0073] This embodiment provides a method for preparing a solar cell, which specifically includes the following steps:

[0074] (1) A single crystal N-type silicon wafer with a resistivity of 1 Ω cm and a thickness of 100 μm is used for texturing, rough polishing with KOH, texturing with KOH and texturing additives, and finally cleaning by RCA cleaning, and the surface is formed Pyramid suede to obtain a textured silicon wafer, the surface reflectance of the textured silicon wafer of the silicon wafer is 10.5%;

[0075] (2) Plasma chemical vapor deposition is used to deposit a layer of intrinsic amorphous silicon layer on both sides of the textured silicon wafer, and the process gas is H 2 and SiH 4 , the volume flow ratio is 95:1, and the power density is 65mW / cm 2 , the thickness of the intrinsic amorphous silicon layer on one side is 5nm; a 5nm thick N-type doped amorphous silicon film layer is deposited on the surface of the intrinsic amorphous silicon layer on one side b...

Embodiment 3

[0081] This embodiment provides a method for preparing a solar cell, which specifically includes the following steps:

[0082] (1) A single crystal N-type silicon wafer with a resistivity of 3Ω·cm and a thickness of 120μm is used for texturing, and KOH is used for rough polishing, and KOH and texturing additives are used for texturing, and finally cleaned by RCA cleaning, and the surface is formed Pyramid suede to obtain a textured silicon wafer, the surface reflectivity of the textured silicon wafer of the silicon wafer is 11.3%;

[0083] (2) Plasma chemical vapor deposition is used to deposit a layer of intrinsic amorphous silicon layer on both sides of the textured silicon wafer, and the process gas is H 2 and SiH 4 , the volume flow ratio is 95:1, and the power density is 65mW / cm 2 , the thickness of the intrinsic amorphous silicon layer on one side is 8nm; a 10nm thick N-type doped amorphous silicon film layer is deposited on the surface of the intrinsic amorphous silic...

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Abstract

The invention provides a solar cell and a preparation method thereof. The preparation method comprises the following steps of sequentially performing texturing, amorphous silicon film deposition, conductive layer deposition and metallization on the surface of a silicon wafer to obtain a whole cell, slicing the whole cell to obtain fragmented cells, and performing light injection on the fragmented cells to obtain the solar cell. Compared with the traditional preparation process, the method has the advantages that the sequence of light injection and slicing is adjusted, the slicing is carried out before light injection, and the efficiency can be improved again after the light injection and hydrogen passivation processes are carried out on the sliced cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a solar cell and a preparation method thereof, in particular to a heterojunction solar cell and a preparation method thereof. Background technique [0002] The photovoltaic cell industry is essentially a technology-intensive industry. Technological innovation is the basis for photovoltaics to eventually become the leading energy source and the backbone of energy transformation. "Heterojunction" cell technology, as a high-efficiency technology route that has attracted great attention from the industry in recent years, has higher photoelectric conversion efficiency and double-sidedness, simple process flow, high potential for efficiency improvement, and large space for cost reduction. Bringing strong development momentum. [0003] Compared with the current mainstream monocrystalline PERC high-efficiency cell technology, which has a mass production bottleneck of 23.5% conversion ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20H01L31/0747
CPCH01L31/202H01L31/208H01L31/0747Y02P70/50Y02E10/50
Inventor 王尧沈慧陈达明徐建美张学玲
Owner TRINA SOLAR CO LTD