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Detection device

A technology for detection devices and interlayer insulating films, applied in radiation control devices, photovoltaic power generation, electrical components, etc.

Pending Publication Date: 2021-07-30
JAPAN DISPLAY INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it may be difficult to detect various types of biometric information such as fingerprints and veins well with the same detection device.

Method used

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  • Detection device
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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0031] figure 1 It is a cross-sectional view showing a schematic cross-sectional configuration of a detection facility with an illumination device having the detection device of the first embodiment. Such as figure 1 As shown, the detection device 120 with an illumination device has a detection device 1 , an illumination device 121 and a cover glass 122 . The illumination device 121 , the detection device 1 , and the cover glass 122 are stacked in this order in a direction perpendicular to the surface of the detection device 1 .

[0032] The illuminating device 121 has a light irradiation surface 121 a for irradiating light, and emits light L1 to the detection device 1 from the light irradiation surface 121 a. The lighting device 121 is a backlight. Illumination device 121 may be, for example, a so-called photometric backlight having a light guide plate provided at a position corresponding to detection area AA and a plurality of light sources arranged at one or both ends of...

no. 2 approach

[0116] Figure 13 It is a circuit diagram showing a partial detection area of ​​the second embodiment. Figure 14 It is a cross-sectional view showing a schematic cross-sectional configuration of the detection device according to the second embodiment. Such as Figure 13 As shown, the anode electrode 35 of the first photodiode PD1 and the anode electrode 55 of the second photodiode PD2 are connected to the first switching element Tr. The cathode electrode 34 of the first photodiode PD1 and the cathode electrode 54 of the second photodiode PD2 are connected to a reference potential, for example, a ground potential. That is, in the second embodiment, the first photodiode PD1 and the second photodiode PD2 are connected in parallel to the first switching element Tr in a direction opposite to that of the first embodiment.

[0117] Such as Figure 14 As shown, the cathode electrode 34 of the first photodiode PD1 is provided on the second interlayer insulating film 25 . The firs...

no. 3 approach

[0123] Figure 15 It is a top view schematically showing a part of the detection area of ​​the detection device of the third embodiment. Figure 16 yes Figure 15 Sectional view of XVI-XVI'. Such as Figure 15 As shown, the first photodiode PD1 is formed with a first semiconductor layer 31 . The anode electrode 35 has a portion protruding outward from the outer periphery of the cathode electrode 34 in the vicinity of the portion overlapping the second photodiode PD2. Specifically, one side 34s of the cathode electrode 34 is arranged apart from the gate line GCL in the second direction Dy. One side 35s of the anode electrode 35 is arranged at a position overlapping the gate line GCL. The anode electrode 35 is connected to the second relay electrode 57 in a region overlapping the gate line GCL, that is, a region between one side 34 s of the cathode electrode 34 and one side 35 s of the anode electrode 35 .

[0124] The second photodiode PD2 and the first switching element ...

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PUM

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Abstract

This detection device has: an insulation substrate; a plurality of gate lines provided on the insulation substrate, and extending in a first direction; a plurality of signal lines provided on the insulation substrate, and extending in a second direction that intersects the first direction; a switching element connected to the plurality of gate lines and the plurality of signal lines; a first photoelectric conversion element that has a first semiconductor layer containing amorphous silicon, and that is connected to the switching element; and a second photoelectric conversion element that has a second semiconductor layer containing polysilicon, and that is connected to the switching element.

Description

technical field [0001] The invention relates to a detection device. Background technique [0002] In recent years, an optical biometric sensor is known as a biometric sensor used for personal authentication or the like. As a biometric sensor, a fingerprint sensor (for example, refer to Patent Document 1) and a vein sensor are known. In the fingerprint sensor disclosed in Patent Document 1, a plurality of photoelectric conversion elements such as photodiodes are arrayed on a semiconductor substrate. In the photoelectric conversion element, the output signal changes according to the amount of irradiated light. [0003] prior art literature [0004] patent documents [0005] Patent Document 1: Specification of U.S. Patent Application Publication No. 2018 / 0012069 [0006] A biometric sensor using an optical sensor is not limited to detecting the shape of a fingerprint of a subject such as a finger or a palm, and needs to detect various biometric information of the subject. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/10H01L27/146
CPCH01L27/14609H01L27/14678Y02E10/546Y02E10/548G06V40/1318H01L27/1214H01L27/1461H01L27/14616H01L29/78633H01L29/78675H01L31/03682H01L31/03762H01L31/105
Inventor 多田正浩内田真中村卓
Owner JAPAN DISPLAY INC